Method of forming a thin film
AssigneesKabushiki Kaisha Toshiba, Tokyo Electron Limited, Tokyo Electron Yamanashi Limited
InventorsHitoshi Ito, Kyoichi Suguro, Nobuo Hayasaka, Haruo Okano, Shinji Himori, Kazuya Nagaseki, Syuji Mochizuki
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Abstract
A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.
Claims22
A method of forming a thin film on a substrate, said method comprising the steps of:
- introducing a material gas containing a metallic substance and a halogen-based gas into a film-forming chamber containing a substrate, said substrate having a groove on its surface;
- and
- converting a mixture gas of the halogen-based gas and the material gas into plasma, thereby to form a thin film anisotropically on the substrate being processed.
A method of forming a thin film on a substrate, said method comprising the steps of:
- introducing a material gas containing a metallic substance and a halogen-based gas into a film-forming chamber containing a substrate, said substrate having a groove on its surface;
- and
- converting a mixture gas of the halogen-based gas and the material gas into plasma, thereby to form a thin film selectively on a surface portion of the substrate which is other than the groove, and on a bottom portion of the groove.
A method of forming a thin film on a substrate, said method comprising the steps of:
- introducing a material gas containing a metallic substance into a film-forming chamber containing a substrate, said substrate having a groove on its surface;
- converting the material gas into plasma, thereby forming a thin film on the substrate being processed;
- exciting a halogen-based gas by a plasma;
- and
- applying the halogen-based gas excited by the plasma to the substrate located in the chamber, thereby etching an entire surface of the thin film and leaving the thin film anisotropically on the substrate.
A method of forming a thin film on a substrate, said method comprising the steps of:
- introducing a material gas containing a metallic substance into a film-forming chamber containing a substrate, said substrate having a groove on its surface;
- converting the material gas into plasma, thereby forming a thin film on the substrate;
- exciting a halogen-based gas by a plasma;
- and
- applying the halogen-based gas excited by the plasma to the substrate located in the chamber, thereby etching an entire surface of the thin film and leaving the thin film selectively on a surface portion of the substrate which is other than the groove, and on a bottom portion of the groove.
Dependencies are inferred from the claim text.