Method for forming Ti-tin laminates
AssigneeAnelva Corporation
InventorsMasahiko Kobayashi, Nobuyoki Takahashi
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Abstract
A method for forming Ti--TiN laminates adapted to reduce the formation of dust particles harmful to semiconductor devices without detriment to productivity, and a magnetron cathode for performing the method are provided. Ti films and TiN films are formed through sputtering of a Ti target using a multi-chamber system comprising at least two chambers each having a magnetron cathode in which a magnet can be moved to accommodate different films. The type of film being formed in each chamber is periodically alternated to prevent a buildup of TiN film adhered to the inner walls of the chambers which peels and causes dust particles.
Claims12
A method for forming Ti--TiN laminates in a multi-chamber system having at least two chambers for magnetron sputtering comprising a magnetron cathode having a Ti target, a circular band magnet truncated by two parallel straight lines and a trapezoidal magnet disposed within said circular band magnet, wherein a process for forming Ti film is carried out within one chamber by magnetron sputtering and a process for forming TiN film is carried out within the other chamber by reactive magnetron sputtering, comprising the steps of:
- (a) carrying out a Ti film formation process on a substrate;
- (b) carrying out a TiN film formation process on said substrate;
- (c) alternating the TiN film formation process and the Ti film formation process within each chamber before a TiN film adhered to an inner wall of the chamber where the process for forming TiN film is being carried out reaches a thickness great enough to cause peeling thereof;
- and
- (d) shifting the position of said trapezoidal magnet at the time of the alternation so that a thickness distribution of said Ti and TiN films is uniform.
A method for forming Ti--TiN laminates in a multi-chamber system having at least two chambers for magnetron sputtering comprising a magnetron cathode having a Ti target, a circular band magnet having at least two portions and which is truncated by two parallel straight lines, and a second magnet disposed within said circular band magnet, comprising the steps of:
- forming Ti film on a substrate within one chamber by magnetron sputtering;
- forming TiN film on the substrate within another chamber by reactive magnetron sputtering;
- alternating the TiN film formation process and the Ti film formation process within each chamber before a TiN film adhered to an inner wall of the chamber where the process for forming TiN film is being carried out reaches a thickness great enough to cause peeling thereof;
- and
- shifting the position of one of said second magnet and a portion of the circular band magnet at the time of the alternation so that a thickness distribution of said Ti and TiN films is uniform.
Dependencies are inferred from the claim text.