Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof

An apparatus for continuously forming a functional deposited film on a continuously moving web member by a microwave plasma CVD process, said apparatus comprising:

• a substantially enclosed columnar film-forming chamber having two opposed side faces and a curved circumferential wall formed by curving and projecting said web member as said web member is moved in a longitudinal direction by a curved portion-forming means, said film-forming chamber having a film-forming space defined by the curved moving web member constituting said circumferential wall in which a plasma is generated;
• at least one microwave applicator means capable of radiating microwave energy in the microwave propagation direction, said microwave applicator means being mounted to said film-forming chamber through one of two side faces thereof such that a part of said microwave applicator means is plunged into said film-forming space, at least said part of the microwave applicator means having a two-layered member on the exterior thereof, said two layered member comprising a metal member and a dielectric member laminated to the metal member such that the dielectric layer is exposed to the film forming space wherein the dielectric member comprises a dielectric material having a value of 2.times.10 or less in the product of the dielectric constant (.epsilon.) and the dielectric dissipation factor (tan .delta.) with respect to the frequency of microwave used;
• a bias voltage applying means capable of applying a bias voltage to control the potential of said plasma generated in said film-forming space;
• means for evacuating said film-forming chamber;
• means for introducing a film-forming raw material gas into said film-forming chamber;
• and
• a temperature controlling means capable of heating and/or cooling said web member.

An apparatus for continuously forming a functional deposited film on a continuously moving web member by a microwave plasma CVD process, said apparatus comprising:

• (a) a first vacuum chamber;
• (b) a second vacuum chamber having a film-forming space disposed in said first vacuum chamber, said second vacuum chamber having a wall defined by said web member, said second vacuum chamber being provided with means for supporting and conveying said web member to form said wall, said means for supporting and conveying being capable of continuously moving said web member in a lengthwise direction of said web member;
• (c) at least one microwave applicator means for introducing microwave energy into said second vacuum chamber to generate a plasma in said second vacuum chamber, said microwave applicator means being mounted to said second vacuum chamber through one of two opposed side faces thereof such that a part of said microwave applicator means is plunged into said second vacuum chamber, at least said part of the microwave applicator means having a two-layered material on the exterior thereof, said two-layered material comprising a metal member and a dielectric member laminated to the metal member such that the dielectric member is exposed to the film forming space of said second vacuum chamber wherein said dielectric member is comprised of a dielectric material having a value of 2.times.10.sup.-2 or less in the product of a dielectric constant (.epsilon.) and a dielectric dissipation factor (tan .delta.) with respect to the frequency of microwave used;
• (d) means for evacuating said first vacuum chamber and said second vacuum chamber;
• (e) means for introducing a film-forming raw material gas into said second vacuum chamber;
• and
• (f) a temperature controlling means capable of heating and/or cooling said web member.