US 5,513,202 A · Vertical-cavity surface-emitting semiconductor laser

Abstract

A vertical-cavity surface-emitting semiconductor laser includes: a p-type bottom mirror having an upper face; a p-type spacer layer covering over the entire upper face of the p-type bottom mirror; an active region including an active layer having a bottom face smaller than the upper face of the p-type bottom mirror, the active region being formed on the p-type spacer layer; an n-type spacer layer formed on the active region; and an n-type top mirror formed on the n-type spacer layer, wherein a sum d of optical path lengths of the p-type spacer layer, the active region and the n-type spacer layer in a perpendicular direction satisfies a relationship expressed by d=(1+n).cndot..lambda./2 (n: natural number) with respect to a wavelength .lambda. of light oscillated from the active region.

Claims20

Dependent claims

A vertical-cavity surface-emitting semiconductor laser comprising:

a p-type bottom mirror having an upper face;
a p-type spacer layer covering over the entire upper face of the p-type bottom mirror;
an active region including an active layer having a bottom face smaller than the upper face of the p-type bottom mirror, the active region being formed on the p-type spacer layer;
an n-type spacer layer formed on the active region;
and
an n-type top mirror formed on the n-type spacer layer,
wherein a sum d of optical path lengths of the p-type spacer layer, the active region and the n-type spacer layer in a perpendicular direction, satisfies a relationship expressed by d=(1+n).cndot..lambda./2 (n:
natural number) with respect to a wavelength .lambda. of light oscillated from the active region.

5 more elements

Dependencies are inferred from the claim text.

Vertical-cavity surface-emitting semiconductor laser

Life of this patent

Vertical-cavity surface-emitting semiconductor laser

Life of this patent

Abstract

Claims20