Blue-green laser diode
AssigneeMinnesota Mining and Manufacturing Company
InventorsMichael A. Haase, James M. DePuydt, Hwa Cheng, Jun Qiu
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Abstract
A II-VI compound semiconductor laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers forming the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A CdZnSe or other II-VI semiconductor quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes.
Claims51
A II-VI compound semiconductor laser diode, including:
- a plurality of layers of II-VI semiconductor forming a pn junction, including:
- a first cladding layer of a first conductivity type;
- a second cladding layer of a second conductivity type;
- and
- at least a first guiding layer between the first and second cladding layers;
- an active layer of II-VI semiconductor within the pn junction;
- a semiconductor substrate for supporting the layers of II-VI semiconductor;
- and
- first and second electrodes for coupling electrical energy to the laser diode.
A II-VI compound semiconductor laser diode including:
- a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first guiding layer;
- an active layer of II-VI semiconductor within the pn junction;
- a semiconductor substrate for supporting the layers of II-VI semiconductor;
- and
- first and second electrodes for coupling electrical energy to the laser diode.
An optical communication, recording, sensing or imaging system including a housing and a II-VI compound semiconductor laser diode mounted within the housing for emitting a coherent light beam in the blue and/or green portions of the spectrum, the optical system including:
- a semiconductor substrate of a first conductivity type within the housing;
- a first cladding layer of II-VI semiconductor of a first conductivity type overlaying the substrate and within the housing;
- a first guiding layer of II-VI semiconductor of the first conductivity type overlaying the first cladding layer and within the housing;
- a second guiding layer of II-VI semiconductor of a second conductivity type overlaying and forming a pn junction with the first guiding layer and within the housing;
- an active layer of II-VI semiconductor within the pn junction and within the housing;
- a second cladding layer of II-VI semiconductor of the second conductivity type overlaying the second guiding layer and within the housing;
- and
- first and second electrodes within the housing, for coupling electrical energy to the pn junction.
An optical communication, recording, sensing or imaging system including a housing and a II-VI compound semiconductor laser diode mounted within the housing for emitting a coherent light beam in the blue and/or green portions of the spectrum, the optical system including:
- a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first guiding layer;
- an active layer of II-VI semiconductor within the pn junction and within the housing;
- a semiconductor substrate for supporting the layers of II-VI semiconductor and within the housing;
- a ridge formed in at least one of the layers of II-VI semiconductor and within the housing;
- and
- first and second electrodes for coupling electrical energy to the laser diode and within the housing.
A II-VI compound semiconductor laser diode comprising a semiconductor substrate, a plurality of layers of II-VI semiconductor forming a pn junction supported by the substrate, including a light-guiding layer and an active layer, and first and second electrodes for coupling electrical energy to the laser diode, for emitting a coherent light beam of at least about 1 mW in green and/or blue portions of the spectrum in response to an applied threshold current corresponding to a threshold current density of less than about 10000 A/cm.sup.2.
Dependencies are inferred from the claim text.