Semiconductor package device for super high-frequency band
AssigneeKabushiki Kaisha Toshiba
InventorKazuhiko Inoue
Life of this patent
Estimating the term…
Abstract
A semiconductor package device capable of reducing inductance as well as improving device mounting density by down-sizing a volume of the package device. The semiconductor package device includes: a lead having an inner lead connected to a ground portion where an end point of the lead coincides with a side face of a resin mold frame and there is provided a concave portion in the lead so that a ground-end lead is exposed; and the resin mold frame which encloses the semiconductor chip and the inner lead. Thereby, the lead is not extended externally of the mold frame, thus making the device further compact-sized. The concave shape is exposed so as to be smoothly and securely interconnected, through a contact window, to bump portions on a mounting substrate.
Claims9
A transistor package for super high-frequency band having a semiconductor chip which has a source, a gate and a drain terminal, the package comprising:
- a first inner lead having a bed portion mounting the semiconductor chip, the first inner lead serving as a base portion of the package;
- a second inner lead and a third inner lead electrically disconnected from the first inner lead;
- and
- means for enclosing the first inner lead, the second inner lead and the third inner lead, the enclosing means including a connection window formed in the vicinity of the semiconductor chip, through which a portion of the first inner lead is exposed and electrically connected to an outer circuit, wherein the first inner lead is bent upward in the vicinity of a side face of the enclosing means and then bent again toward and substantially perpendicular to the side face of the enclosing means.
Dependencies are inferred from the claim text.