Back to results
US 5,512,776 AGranted
Interdigitated IMPATT devices
AssigneeTexas Instruments Incorporated
InventorBurhan Bayraktaroglu
Life of this patent
Estimating the term…
Abstract
A monolithic circuit including an IMPATT with the IMPATT formed as a plurality of parallel vertical fingers or an array of vertical mesas having a common doped region to apread the area for heat dissipation through the substrate.
Claims7
A monolithic semiconductor structure, comprising:
- (a) a semiconductor substrate;
- (b) an IMPATT device formed on said substrate and electrically isolated from other surface regions of said substrate, said IMPATT device including:
- i. a plurality of stacks, each of said stacks vertical from said substrate and including a heavily doped top portion, a lightly doped middle portion, and a heavily doped bottom portion with doping type opposite that of said top portion, said stacks spaced from each other to provide heat dissipation through said substrate and with said bottom portions joined to a common active layer, and
- ii. a connector electrically coupling together said top portions of said stacks remote from said substrate.
1 more element
Dependencies are inferred from the claim text.