Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

A vertical field-effect resonant tunneling transistor device comprising:

• a semi-conducting substrate;
• a drain region above said semi-conducting substrate;
• a multiple-barrier multi-well resonant tunneling diode above said drain layer;
• a two dimensional electron gas heterostructure above said multiple-barrier multi-well resonant tunneling diode;
• a source region extending through said two dimensional electron gas and above said multiple-barrier multi-well resonant tunneling diode;
• ohmic contacts on said source region, wherein said source region provides an ohmic connection to said two dimensional electron gas;
• and
• a gate besides said source region.

A vertical field-effect resonant tunneling transistor device comprising:

• a semi-conducting substrate;
• a drain region above said semi-conducting substrate;
• a triple-barrier double-well resonant tunneling diode above said drain region;
• a two dimensional electron gas heterostructure above said triple-barrier double-well resonant tunneling diode;
• a source region extending through said two dimensional electron gas and above said triple-barrier double-well resonant tunneling diode;
• ohmic contacts on said source region, wherein said source region provides an ohmic connection to said two dimensional electron gas;
• and
• two gates besides said source region.