Micro-pattern measuring apparatus
AssigneeKabushiki Kaisha Toshiba
InventorTsuyoshi Saito
Life of this patent
Estimating the term…
Abstract
A scanning electron microscope scans a sample with an electron beam in a transverse direction, to measure the size of the sample. The microscope has an electron gun for emitting an electron beam, a scan coil and an electron lens for periodically deflecting the electron beam, a detector for detecting a secondary electron signal, a unit for measuring the size of the sample according to the secondary electron signal and displaying the sample, and a probe for catching charged electrons on the sample. This microscope correctly measures the size of a sample that is made of easily-charged material such as photoresist or insulation material.
Claims20
A micro-pattern measuring apparatus for transversely scanning a measurement object with an electron beam, to measure the size of the object without causing a surface contamination of the object and without deforming a microstructure of the object, comprising:
- (a) an electron gun for emitting an electron beam toward the object;
- (b) an electron optical system for periodically deflecting the electron beam, to scan the object;
- (c) detection means for detecting a secondary electron signal generated by the object in response to the electron beam;
- (d) measurement means for measuring the size of the object according to the secondary electron signal;
- and
- (e) a conductive probe for catching charged electrons on the object, the probe being arranged in a predetermined space relation as to the position of a scanning line of the electron beam on a surface of the object.
A micro-pattern measuring apparatus for transversely scanning a measurement object with an electron beam, to measure the size of the object without causing a surface contamination of the object and without deforming a microstructure of the object, comprising:
- (a) an electron gun for emitting an electron beam toward the object;
- (b) an electron optical system for periodically deflecting the electron beam to scan the object;
- (c) detection means for detecting a secondary electron signal generated by the object in response to the electron beam;
- (d) measurement means for measuring the size of the object according to the secondary electron signal;
- and
- (e) a conductive probe for catching charged electrons on the object, the probe being arranged in a predetermined time relation as to the scanning period of the electron beam on a surface of the object.
Dependencies are inferred from the claim text.