Method of producing an oxide superconductor single crystal film

A method of producing an oxide superconductor film comprising the steps of:

• providing an oxide superconductor YBa.sub.2 Cu.sub.3 O.sub.7-x single crystal substrate consisting essentially of an oxide superconductor material;
• heating the substrate at a temperature between 450.degree. C. and 800.degree. C.;
• and
• growing an oxide superconductor YBa.sub.2 Cu.sub.3 O.sub.7-x film with the same orientation as the substrate by a pulse laser deposition method.

A method of producing an oxide superconductor film comprising the steps of:

• providing an oxide superconductor YBa.sub.2 Cu.sub.3 O.sub.7-x single crystal substrate consisting essentially of an oxide superconductor material;
• heating the substrate at a temperature between 450.degree. C. and 800.degree. C.;
• and
• growing an oxide superconductor YBa.sub.2 (Cu.sub.z M.sub.1-z).sub.3 O.sub.7-x film in the same orientation as the substrate by a pulse laser deposition method, wherein
• M=Ni and z is at least 0.90 and less than 1, or
• M=Co and z is at least 0.90 and less than 1, or
• M=Zn and z is at least 0.95 and less than 1.

A method of producing an oxide superconductor film comprising the steps of:

• providing an oxide superconductor YBa.sub.2 (Cu.sub.z M.sub.1-z).sub.3 O.sub.7-x single crystal substrate consisting essentially of an oxide superconductor material;
• heating the substrate at a temperature between 450.degree. C. and 800.degree. C.;
• and
• growing an oxide superconductor YBa.sub.2 (Cu.sub.z M.sub.1-z).sub.3 O.sub.7-x film in the same orientation as the substrate by a pulse laser deposition method, wherein:
• M=Ni and z is at least 0.90 and less than 1, or
• M=Co and z is at least 0.90 and less than 1, or
• M=Zn and z is at least 0.95 and less than 1.

A method of producing an oxide superconductor film comprising the steps of:

• providing a superconductor single crystal substrate consisting essentially of a superconductor material with an orientation containing a rare earth metal, an alkali earth metal and a copper metal;
• and
• growing the oxide superconductor film homoepitaxially on the substrate in the same orientation as the substrate,
• wherein the substrate is a single crystal of LR.sub.2 M.sub.3 O.sub.7-x, where L=Y, La, Er, Eu, Gd, Dy, Sm or Ho;
• R=Ba, Sr or Mg;
• and wherein M is selected from the group consisting of Cu and Cu in combination with Ni, Co or Zn.

A method of producing an oxide superconductor film comprising the steps of:

• providing a superconductor single crystal substrate consisting essentially of superconductor material with an orientation containing a rare earth metal, an alkali earth metal and a copper metal;
• and
• growing the oxide superconductor film of a material having a lattice structure which will be reduced to the substrate lattice by replacing constituent atoms heteroepitaxially on the substrate in the same orientation as the substrate,
• wherein the substrate is a single crystal of LR.sub.2 M.sub.3 O.sub.7-x, where L=Y, La, Er, Eu, Gd, Dy, Sm or Ho;
• R=Ba, Sr or Mg;
• and wherein M is selected from the group consisting of Cu and Cu in combination with Ni, Co or Zn.

A method of producing an oxide superconductor film comprising the steps of:

• providing a superconductor single crystal substrate consisting essentially of a superconductor material with an orientation containing a rare earth metal, an alkali earth metal and a copper metal;
• and
• growing the oxide superconductor film of a material having a lattice structure which will be reduced to the substrate lattice by replacing metal constituent atoms heteroepitaxially on the substrate in the same orientation as the substrate,
• wherein the superconductor film is a single crystal of LR.sub.2 M.sub.3 O.sub.7-x, where L=Y, La, Er, Eu, Gd, Dy, Sm or Ho;
• R=Ba, Sr or Mg;
• and wherein M is selected from the group consisting of Cu and Cu in combination with Ni, Co or Zn.