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US 5,512,540 AGranted
Method of manufacturing superconducting patterns
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A manufacturing method of a superconducting pattern is described. A superconducting ceramic film is deposited on a non-conductive surface and partly spoiled in order to form a barrier film by which two superconducting regions is separated. The spoiling is performed by adding a spoiling element into the ceramic film by ion implantation.
Claims28
A method of forming an electrical device comprising:
- forming an oxide superconducting film on a surface of a substrate;
- treating said superconducting film to establish a superconducting crystalline structure having a C-plane thereof oriented parallel to the surface of the substrate;
- doping a selected portion of the superconducting film with a metal or semiconductor dopant in order to decrease the superconductivity of said selected portion;
- and
- forming a control electrode, wherein said control electrode overlies said selected portion of the superconducting structure.
2 more elements
A method of forming an electrical device comprising:
- forming a first control electrode on a portion of a surface of a substrate;
- forming an oxide superconducting film on the surface of the substrate and overlying said first electrode;
- treating said superconducting film to establish a superconducting crystalline structure having a C-plane thereof oriented parallel to the surface of the substrate;
- doping a selected portion of the superconducting film which overlies said first electrode with a semiconductor or metal dopant in order to decrease the superconductivity of said selected portion;
- and
- forming a second control electrode, wherein said second control electrode overlies said selected portion of the superconducting structure.
3 more elements
A method of producing a superconducting pattern comprising:
- forming an oxide superconducting film on a substrate;
- treating said superconducting film to establish a superconducting crystalline structure having a C plane oriented parallel to the surface of the substrate;
- and
- doping a selected portion of the superconducting structure with a semiconductor or metal dopant in order that the superconductivity in said portion is decreased,
- wherein said doped portion is in the form of a barrier layer to separate said oxide superconducting film into two parts;
- and
- wherein the thickness of said doped portion is thin enough so that a current can pass therethrough.
4 more elements
A method of forming an electrical device comprising:
- preparing an oxide superconducting film;
- doping a selected portion of the superconducting film with a semiconductor or metal dopant in order to decrease the superconductivity of said selected portion;
- and
- forming a control electrode, wherein said control electrode overlies said selected portion of the superconducting structure.
1 more element
A method of forming an electrical device comprising:
- forming an oxide superconducting film on a surface of a substrate;
- treating said superconducting film to establish a superconducting crystalline structure having a C-plane thereof oriented parallel to the surface of the substrate;
- doping a selected portion of the superconducting film with phosphorus in order to decrease the superconductivity of said selected portion;
- and
- forming a control electrode, wherein said control electrode overlies said selected portion of the superconducting structure.
2 more elements
A method of forming an electrical device comprising:
- forming a first control electrode on a portion of a surface of a substrate;
- forming an oxide superconducting film on the surface of the substrate and overlying said first electrode;
- treating said superconducting film to establish a superconducting crystalline structure having a C-plane thereof oriented parallel to the surface of the substrate;
- doping a selected portion of the superconducting film which overlies said first electrode with phosphorus in order to decrease the superconductivity of said selected portion;
- and
- forming a second control electrode, wherein said second control electrode overlies said selected portion of the superconducting structure.
3 more elements
A method of producing a superconducting pattern comprising:
- forming an oxide superconducting film on a substrate;
- treating said superconducting film to establish a superconducting crystalline structure having a C plane oriented parallel to the surface of the substrate;
- and
- doping a selected portion of the superconducting structure with phosphorus in order that the superconductivity in said portion is decreased,
- wherein said doped portion is in the form of a barrier layer to separate said oxide superconducting film into two parts;
- and
- wherein the thickness of said doped portion is thin enough so that a current can pass therethrough.
4 more elements
A method of forming an electrical device comprising:
- preparing an oxide superconducting film;
- doping a selected portion of the superconducting film with phosphorus in order to decrease the superconductivity of said selected portion;
- and
- forming a control electrode, wherein said control electrode overlies said selected portion of the superconducting structure.
1 more element
Dependencies are inferred from the claim text.