Method of forming a silicon insulating layer in a semiconductor device
AssigneeGoldstar Electron Co., Ltd.
InventorHyunsang Hwang
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Abstract
The present invention provides a method of forming an insulating layer of a semiconductor device, in which an oxide layer having an optimum nitrogen concentration and also a sufficient thickness may be grown by independently regulating the flow rate of NO and O.sub.2 gas and supplying the NO and O.sub.2 gas to a reaction chamber. This method is such that the NO and O.sub.2 gas is supplied to the chamber by regulating the NO and O.sub.2 gas, while maintaining the inside of the chamber at a temperature of about 750.degree. C. to 1050.degree. C. for a predetermined time, wherein nitrogen is included in a Si/SiO.sub.2 interface.
Claims18
A method of forming an insulating layer in a semiconductor device, comprising the steps of:
- positioning a silicon wafer in a reaction chamber of a CVD apparatus, purging the reaction chamber, and maintaining a reaction chamber temperature of about 750.degree. C. to 1050.degree. C.;
- carrying out an oxidation process on the silicon wafer by supplying a gas containing essentially NO and an O.sub.2 -containing gas to the reaction chamber and independently regulating the flow rate of the NO- and O.sub.2 -containing gases, while maintaining the reaction chamber temperature to about 750.degree. C. to 1050.degree. C. for a predetermined time, wherein the insulating layer including nitrogen in a Si/SiO.sub.2 interface is formed.
A method of forming an insulating layer on a silicon surface comprising the steps of:
- supplying and exposing the silicon surface to an O.sub.2 -containing gas to form an oxide layer on the silicon surface;
- and
- supplying and exposing the silicon surface and the oxide layer to a gas containing essentially NO, wherein nitrogen is introduced into the interface of the oxide layer and the silicon surface, wherein the temperature is maintained in a range of about 750.degree. C. to 1050.degree. C., and the supply of the NO- and O.sub.2 -containing gases is regulated independently.
Dependencies are inferred from the claim text.