Process for forming aluminum alloy thin film

Abstract

A process comprising the steps of introducing an organic aluminum compound,including at least one of trialkylaluminum and dialkylhydriroaluminum, a copper chelate compound and a silane compound having one to three silicon atoms in the form of a gas mixture into a reactor holding a substrate heated to 250.degree. to 400.degree. C., forming an aluminum alloy thin film containing 0 to 5% copper and 0.1 to 2% silicon on the aforementioned substrate, and heat-treating the substrate formed with the aluminum thin film in an inert gas or hydrogen atmosphere at 400.degree. to 450.degree. C. In application of the present invention to a wiring technique of the semiconductor integrated circuit, it is possible to form a metallic thin film capable of completely smoothing a contact hole having a high aspect ratio.

Dependencies are inferred from the claim text.