Method of fabricating semiconductor device with water protective film
AssigneeNippon Telegraph and Telephone Corporation
InventorsKatsuyuki Machida, Katsumi Murase, Nobuhiro Shimoyama, Toshiaki Tsuchiya, Junichi Takahashi, Kazushige Minegishi, Yasuo Takahashi, Hideo Namatsu, Kazuo Imai
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Abstract
A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
Claims15
A method of fabricating a semiconductor device, comprising the steps of:
- forming a first dielectrics film capable of suppressing penetration of water on a semiconductor substrate;
- forming a second dielectrics film by spin on glass or chemical vapor deposition;
- heating said semiconductor substrate to desorb all or part of water from said second dielectrics film;
- and
- forming a third dielectrics film in an atmosphere substantially free of water, thereby forming an interlevel film constituted by said dielectrics films.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a semiconductor device and a first metal interconnection on a semiconductor substrate;
- forming a first dielectric film containing dangling bonds and a bonded group of Si and hydrogen;
- forming a second dielectric film on said first dielectric film;
- forming a third dielectric film having different characteristics from said second dielectric film on said second dielectric film, thereby forming an interlevel film constituted by said dielectric films.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a semiconductor device and a first metal interconnection on a semiconductor substrate;
- forming a first dielectrics film capable of preventing penetration of water;
- forming a second dielectrics film on said first dielectrics film;
- forming a third dielectrics film having different characteristics from those of said second dielectrics film;
- forming holes reaching said first metal interconnection;
- and
- forming a second metal interconnection.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a semiconductor device and a first metal interconnection on a semiconductor substrate;
- forming a first dielectrics film capable of suppressing penetration of water;
- forming a second dielectrics film on said first dielectrics film;
- forming a third dielectrics film having different characteristics from those of said second dielectrics film;
- forming a second metal interconnection on said third dielectrics film;
- and
- forming holes reaching said first metal interconnection, thereby connecting said first and second metal interconnections.
Dependencies are inferred from the claim text.