Method of manufacturing amorphous silicon electrophotographic photosensitive member
AssigneeCanon Kabushiki Kaisha
InventorsHitoshi Murayama, Satoshi Kojima
Life of this patent
Estimating the term…
Abstract
A method for stably manufacturing, with improved reproducibility, a good amorphous silicon electrophotographic photosensitive member improved in potential characteristics such as chargeability and photoresponse as well as in the effect of reducing photo-memory and defects which cause spot image defects. A film is formed by plasma CVD on a base of the photosensitive member by using electromagnetic waves having a frequency of 13.56 MHz or higher as power for forming plasma under conditions that the spatial potential of plasma generated by the electromagnetic waves with respect to a base of the photosensitive member is not higher than 120 V and the current density of ions incident upon the base is not lower than 0.4 mA/cm.sup.2.
Claims7
A method of manufacturing an amorphous silicon electrophotographic photosensitive member by a plasma CVD process using electromagnetic waves having a frequency of 13.56 MHz or higher as power for generating plasma, comprising forming a film under conditions that the spatial potential of plasma generated by the electromagnetic waves with respect to a base of the photosensitive member is not higher than 120 V and the current density of ions incident upon the base is not lower than 0.4 mA/cm.sup.2.
Dependencies are inferred from the claim text.