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US 5,512,499 AGranted
Method of making symmetrical and asymmetrical MESFETS
AssigneeMotorola, Inc.
InventorsBertrand F. Cambou, James G. Gilbert, Gregory L. Hansell
Life of this patent
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Abstract
A method of fabricating a MESFET is comprised of providing a semiconductor material having a channel region formed therein, forming a gate on the semiconductor material over the channel region, forming a spacer adjacent a first portion of the gate disposed on the semiconductor material, and forming a hard mask disposed on a second portion of the gate and on a portion of the semiconductor material.
Claims7
A method of fabricating a semiconductor device comprising the steps of:
- providing a semiconductor material, having a first channel region formed therein;
- forming a first gate on the semiconductor material over only a portion of the first channel region;
- forming a first conformal layer over the semiconductor material and over the first gate;
- etching the first conformal layer to form a first spacer on the semiconductor material adjacent the first gate;
- forming a second conformal layer on the semiconductor material, the first spacer and on the first gate;
- providing a masking layer over the second conformal layer only over a first portion of the first gate and a first portion of the semiconductor material adjacent the first portion of the first gate;
- etching the second conformal layer using the masking layer as a mask to form a hard mask only over the first portion of the first gate and the first portion of the semiconductor material adjacent the first portion of the first gate;
- removing the masking layer and etching the hard mask to form a second spacer adjacent the first portion of the first gate;
- and
- forming a first source and a first drain region in a portion of the semiconductor material after removing the masking layer and etching the hard mask to form a second spacer.
7 more elements
A method of fabricating a semiconductor device comprising the steps of:
- providing a semiconductor material, having a first channel region formed therein;
- forming a first gate on the semiconductor material over only a portion of the first channel region;
- forming a first conformal layer over the semiconductor material and over the first gate;
- etching the first conformal layer to form a first spacer adjacent the first gate disposed on the semiconductor material;
- forming a second conformal layer over the semiconductor material, the first spacer and over the first gate;
- etching the second conformal layer to form a first hard mask disposed only on a portion of the first gate, a portion of the first spacer and on a portion of the semiconductor material adjacent the portion of the first gate;
- etching the first hard mask to form a second spacer disposed on the semiconductor material adjacent a portion of the first spacer;
- and
- forming a first source and a first drain region in a portion of the semiconductor material after etching the first hard mask to form a second spacer.
6 more elements
Dependencies are inferred from the claim text.