Method of manufacturing a semiconductor integrated circuit device

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

• a) forming a silicon film, by deposition, overlying a main surface of a semiconductor body;
• b) introducing first impurities of a first conductivity type into said silicon film overlying a first selected surface area of said main surface, and introducing second impurities of a second conductivity type, which is opposite to said first conductivity type, into said silicon film overlying a second selected surface area of said main surface, thereby to form a first portion, having the first conductivity type, of said silicon film overlying said first selected surface area, and to form a second portion, having the second conductivity type, of said silicon film overlying said second selected surface area, said silicon film having a boundary in which said first portion and said second portion contact each other;
• c) forming a film including a refractory metal on said silicon film, so as to cover said silicon film;
• d) after the steps a), b) and c), removing parts of said film including said refractory metal at said boundary of said first portion and said second portion, so as to form a first film on said first portion of said silicon film and a second film on said second portion of said silicon film in such a manner that said first film on said first portion of said silicon film and said second film on said second portion of said silicon film are spaced from each other and said silicon film is continuous at said boundary of said first portion and said second portion of said silicon film;
• and
• e) after the step d), forming an insulating film over said main surface of said semiconductor body by chemical vapor deposition so as to cover said first film and said second film.

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

• a) selectively forming a field insulating film in a main surface of a semiconductor body, said field insulating film surrounding a first selected surface area and a second selected surface area of said main surface;
• b) forming a silicon film, by deposition, overlying said main surface of said semiconductor body;
• c) introducing first impurities of a first conductivity type into said silicon film overlying said first selected surface area of said main surface, and introducing second impurities of a second conductivity type, which is opposite to said first conductivity type, into said silicon film overlying said second selected surface area of said main surface, thereby to form a first portion, having the first conductivity type, of said silicon film overlying said first selected surface area, and to form a second portion, having the second conductivity type, of said silicon film overlying said second selected surface area, said silicon film having a boundary in which said first and second portions are contacted with each other, said boundary of said silicon film extending on said field insulating film between said first and second selected surface areas;
• d) forming a film including a refractory metal on said silicon film, so as to cover said silicon film;
• e) after the steps a), b), c) and d), removing a part of said film including said refractory metal at said boundary of said silicon film, so as to form a first film on said first portion of said silicon film and a second film on said second portion of said silicon film, in such a manner that said first film on said first portion of said silicon film and said second film on said second portion of said silicon film are spaced from each other, said silicon film being continuous at said boundary of said first portion and said second portion of said silicon film, said first film and said first portion of said silicon film being used for providing a gate electrode of a first MISFET, said second film and said second portion of said silicon film being used for providing a gate electrode of a second MISFET;
• and
• f) after step e), forming an insulating film over said main surface of said semiconductor body by chemical vapor deposition so as to cover said first film and said second film.

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

• a) selectively forming a field insulating film in a main surface of a semiconductor body, said field insulating film surrounding a first selected surface area and a second selected surface area of said main surface;
• b) forming a silicon film, by deposition, overlying said main surface of said semiconductor body;
• c) introducing first impurities of a first conductivity type into said silicon film overlying said first selected surface area of said main surface, and introducing second impurities of a second conductivity type, which is opposite to said first conductivity type, into said silicon film overlying said second selected surface area of said main surface, thereby to form a first portion, having the first conductivity type, of said silicon film overlying said first selected surface area, and to form a second portion, having the second conductivity type, of said silicon film overlying said second selected surface area, said silicon film having a boundary in which said first and second portions are contacted with each other, said boundary of said silicon film extending on said field insulating film between said first and second selected surface areas;
• d) forming a film including a refractory metal on said silicon film, so as to cover said silicon film;
• e) after the steps a), b), c) and d), removing a part of said film including said refractory metal at said boundary of said silicon film, so as to form a first film on said first portion of said silicon film and a second film on said second portion of said silicon film, in such a manner that said first film on said first portion of said silicon film and said second film on said second portion of said silicon film are spaced from each other, and in such a manner that the silicon film remains continuous at the field insulating film between the first and second selected surface areas, said first film and said first portion of said silicon film being used for providing a gate electrode of a first MISFET, said second film and said second portion of said silicon film being used for providing a gate electrode of a second MISFET;
• and
• f) forming an insulating film over said main surface of said semiconductor body by chemical vapor deposition so as to cover said first film and said second film.