Method for manufacturing a thin film transistor having a forward staggered structure
AssigneeNEC Corporation
InventorHiroshi Tanabe
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Abstract
A thin film transistor having a staggered structure and manufactured by the method of the invention comprises a first amorphous silicon film of a uniform thickness including source and drain regions, a second amorphous semiconductor film acting as a channel layer, a gate insulating film and a gate electrode laminated on a glass substrate in this order. An interface between the semiconductor film and the gate insulating film is formed flat from the source region to the drain region through a channel region. The thin film transistor formed in a staggered structure features a uniform drain current distribution and a high carrier mobility which improve current drivability and LCD image quality when used in a LCD.
Claims13
A method for forming a semiconductor device, including the steps of:
- forming on an insulating surface of a substrate a first semiconductor film including a source region and a drain region, said first semiconductor film having a substantially uniform thickness;
- forming a second semiconductor film on said first semiconductor film without etching a region of said first semiconductor film between the source region and the drain region;
- irradiating a laser beam onto said second semiconductor film to anneal said second semiconductor film;
- and
- forming consecutively a gate insulating film and a gate electrode on said second semiconductor film after said irradiating by said laser beam.
A method for forming a semiconductor device including the steps of:
- forming on an insulating surface of a substrate a metal pattern layer acting as electrodes for a source region and a drain region;
- forming over said metal pattern layer a first semiconductor film including a source region and a drain region, said first semiconductor film having a substantially uniform thickness;
- forming a second semiconductor film on said first semiconductor film;
- irradiating a laser beam onto said second semiconductor film to anneal said second semiconductor film;
- and forming, consecutively, a gate insulating film and a gate electrode on said second semiconductor film after said irradiating by said laser beam.
Dependencies are inferred from the claim text.