Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method

Abstract

Methods of forming a resist pattern allow the size of the resist pattern to be controlled in its formation, and the size of the underlying substrate to be controlled in etching the same even with a step portion existing on the substrate. The methods of forming a resist pattern on a substrate by lithography use far-ultra violet light. An organic silane compound for forming an anti reflection film on the surface of a substrate includes a silicon atom, a leaving group bound to the silicon atom and replaceable with an hydroxyl group existing in the surface of the semiconductor substrate to bind covalently the semiconductor substrate and the organic silane compound, and a substituent group absorbing the far-ultra violet light. The substrate is coated with the organic silane compound. Resist is applied onto the substrate coated with the organic silane compound. The resist is exposed selectively using far-ultra violet light, and then developed.

Dependencies are inferred from the claim text.