Apparatus for p-type doping of semiconductor structures formed of group II and group VI elements
AssigneeTexas Instruments Incorporated
InventorHung-Dah Shih
Life of this patent
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Abstract
A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitrogen is passed through a plasma generator (46) for convening it to activated nitrogen, and the activated nitrogen is conducted through an elongated guide tube (50) toward the substrate (66) upon which a Group II-Group VI layer (68, 80, 92) is being grown. In one embodiment, an n-type dopant source (72) is also provided, the apparatus (10) being operable for forming electrical devices (86, 88) having successive layers (78, 80, 90, 92, 94) of differing electrical characteristics.
Claims6
Apparatus for epitaxially growing a p-type semiconductor layer consisting essentially of II-VI material, the apparatus comprising:
- an epitaxial growth chamber and means for drawing an ultra-high vacuum within the chamber;
- a plurality of effusion cells associated with the chamber, the effusion cells containing at least one Group II element selected from the group consisting of cadmium, zinc, and lead, the Group II element of mercury, and at least one Group VI element selected from the group consisting of tellurium and selenium;
- a substrate support positionable within the chamber and means for heating the substrate support, and any substrate mounted thereon, to epitaxial growth temperatures;
- and
- means for injecting activated nitrogen into the chamber during epitaxial growth of a semiconductor layer.
Dependencies are inferred from the claim text.