Paste for resistive element film

A resistive element film-forming material, which comprises (1) an organic iridium (Ir) compound, (2) a compound containing at least one element (M) selected from the group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti) and barium (Ba), with a ratio of atoms in said elements (M) to atoms in said organic iridium (Ir) compound ranging from 2.7 to 5, and (3) a solution of asphalt dissolved in a solvent.

A resistive element, formed by a process which comprises coating a resistive element film-forming paste comprising (1) an organic metal compound, (2) at least one organic nonmetal additive, and (3) a solution of asphalt dissolved in a solvent on a substrate, and then calcining the paste.

An electronic component, comprising a resistive element formed by a process which comprises coating a resistive element film-forming paste comprising (1) an organic metal compound, (2) at least one organic nonmetal additive, and (3) a solution of asphalt dissolved in a solvent on a substrate, and then calcining the paste.

A resistive element, formed by a process which comprises coating on a substrate a resistive element film-forming material, which comprises (1) an organic iridium (Ir) compound, (2) a compound containing at least one element (M) selected from the group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti) and barium (Ba), with a ratio of atoms in said elements (M) to iridium atoms in said organic iridium (Ir) compound ranging from 2.7 to 5, and (3) a solution of asphalt dissolved in a solvent, and then calcining the material.

A thermal head, comprising (1) a substrate, (2) a thin glass film provided on said substrate, and (3) a resistive element film provided on said thin glass film and having a means of conducting electric current to said resistive element film, wherein said resistive element film is formed by a process which comprises coating on said thin glass film a resistive element film-forming material comprising an organic iridium (Ir) compound, a compound containing at least one element (M) selected from the group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti) and barium (Ba), with a ratio of atoms in said elements (M) to iridium atoms in said organic iridium (Ir) compound ranging from 2.7 to 5, and a solution of asphalt dissolved in a solvent, and then calcining the material.

A resistive element film-forming material, which comprises (1) an organic iridium (Ir) compound, (2) a compound containing at least one element (M) selected from the group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti) and barium (Ba), and (3) a solution of asphalt dissolved in a solvent, with a ratio of atoms in said elements (M) to atoms in said organic iridium (Ir) compound ranging from 3 to 5.