Ceramic semiconductor package having varying conductive bonds
AssigneeMotorola, Inc.
InventorsIndira Adhihetty, Brian J. Miller, Ramaswamy Padmanabhan
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Abstract
A semiconductor chip package is manufactured comprising a heatsink bonded to an aluminum nitride insulative layer by a thermally conductive and electrically nonconductive epoxy. The aluminum nitride insulative layer is bonded to several portions of a leadframe by an epoxy which is thermally conductive and electrically nonconductive and another epoxy which is thermally conductive and electrically conductive. A semiconductor die is bonded to the aluminum nitride insulative layer by a thermally conductive and electrically conductive epoxy.
Claims25
A package for housing a semiconductor chip, comprised of:
- a heatsink comprised of copper;
- a first epoxy which is thermally conductive and electrically nonconductive chemically bonded to a portion of the heatsink;
- an insulative layer chemically bonded to the first epoxy;
- a second epoxy which is thermally conductive and electrically conductive chemically bonded to a first portion of the insulative layer;
- a third epoxy which is thermally conductive and electrically nonconductive chemically bonded to a second portion of the insulative layer;
- and
- a leadframe comprised of copper physically separated into at least a first and a second portion, wherein the first portion of the leadframe is chemically bonded to the second epoxy and the second portion of the leadframe is chemically bonded to the third epoxy.
A package for housing a semiconductor chip, comprised of:
- a heatsink comprised of copper;
- a first silica filled epoxy which is thermally conductive and electrically nonconductive chemically bonded to a portion of the heatsink;
- an insulative layer chemically bonded to the first epoxy;
- a first silver filled epoxy which is thermally conductive and electrically conductive chemically bonded to a first portion of the insulative layer;
- a second silica filled epoxy which is thermally conductive and electrically nonconductive chemically bonded to a second portion of the insulative layer;
- and
- a leadframe comprised of copper physically separated into at least a first and a second portion, wherein the first portion of the leadframe is chemically bonded to the first silver filled epoxy and the second portion of the leadframe is chemically bonded to the second silica filled epoxy.
A package for housing a semiconductor chip, comprised of:
- a heatsink comprised of copper;
- a first epoxy which is thermally conductive and electrically nonconductive chemically bonded to a portion of the heatsink through a first oxide bond;
- an insulative layer comprised of aluminum-nitride chemically bonded to the first epoxy through a second oxide bond;
- a second epoxy which is thermally conductive and electrically conductive chemically bonded to a first portion of the insulative layer through a third oxide bond;
- a third epoxy which is thermally conductive and electrically nonconductive chemically bonded to a second portion of the insulative layer through a fourth oxide bond;
- and
- a leadframe comprised of copper physically separated into at least a first and a second portion, wherein the first portion of the leadframe is chemically bonded to the second epoxy through a fifth oxide bond and the second portion of the leadframe is chemically bonded to the third epoxy through a sixth oxide bond.
Dependencies are inferred from the claim text.