CDTE x-ray detector for use at room temperature

A CdTe x-ray detector for use at room temperature comprising in combination

• A) a high resistivity, intrinsic CdTe layer dimensioned for x-ray absorption, having two parallel faces,
• B) a photo-assisted molecular beam epitaxially (PAMBE) grown CdTe layer using a group III element as an n type dopant to form an n type layer and forming on one of said faces an n-i interface, said n type layer having a first metal contact,
• C) a PAMBE grown CdTe layer using arsenic as a p-type dopant to form a p type layer and forming on the other of said faces an i-p interface,, said p type layer having a second metal contact,
• D) a PAMBE grown HgTe layer formed on said arsenic doped layer to enhance formation of an ohmic contact,
• said combination forming a CdTe p-i-n homojunction.

A CdTe x-ray detector for use at room temperatures comprising in combination

• A) a substrate suitable for epitaxial growth of CdTe material,
• B) a photo-assisted molecular beam epitaxially (PAMBE) grown CdTe layer using an n-type dopant, for forming an n-type layer on said substrate, the n-type layer having a metallic contact layer on a first surface portion thereof, and
• C) a high resistivity PAMBE formed intrinsic CdTe layer dimensioned for x-ray absorption grown on a second surface portion of said n type layer and forming an n-i interface,
• D) a PAMBE grown CdTe layer using arsenic as a p-type dopant for forming a p-type layer on said intrinsic CdTe layer and forming a p-i interface,
• E) a PAMBE grown HgTe contact layer formed on said p-type layer, and
• F) a metallic contact being formed on said HgTe contact layer,
• said combination forming a CdTe p-i-n homojunction.

A CdTe x-ray detector for use at room temperature, comprising:

• a first layer including intrinsic CdTe, the first layer having two parallel faces;
• a second layer including CdTe and a group III element as an n type dopant for the second layer, the second layer forming with the first layer an n-i interface on one of the faces;
• a third layer including CdTe and arsenic as a p type dopant for the third layer, the third layer forming with the first layer an i-p interface on the other of the faces;
• a fourth layer including HgTe formed on the third layer;
• a first metal contact for the fourth layer;
• and
• a second metal contact for the second layer,
• whereby a CdTe p-i-n homojunction is formed.