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US 5,510,635 AGranted
Integrated circuit having complementary heterojunction field effect transistors
AssigneePicogiga Societe Anonyme
InventorLinh T. Nuyen
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AssigneePicogiga Societe Anonyme
InventorLinh T. Nuyen
Estimating the term…
The circuit comprises a heterojunction formed between a layer (6) comprising an III-V semiconductor material having a wide forbidden band and a layer (5) comprising an III-V semiconductor material having a narrow forbidden band and whose crystal lattice mismatch with the remainder of the structure is such that the layer comprising the narrow forbidden band material is under uniaxial compression strain in the plane of the layer. According to the invention the thickness of the layer (6) comprising the wide forbidden band material is selected to be smaller for the p-channel transistor than for the n-channel transistor, the ratio of these respective thicknesses being a predetermined ratio that is a function of the relative tunnel transparency for holes compared with that for electrons.
An integrated circuit having complementary components of the p-channel and n-channel field effect transistor type, with a heterojunction formed between a barrier layer comprising a III-V semiconductor material having a wide forbidden band and a thin layer comprising a III-V semiconductor material having a narrow forbidden band and whose crystal lattice mismatch with the remainder of the structure is such that the thin layer is under uniaxial compression strain in the plane of the layer, wherein the barrier-layer thickness for the p-channel transistor is less than the barrier-layer thickness for the n-channel transistor at a ratio that is proportional to tunneling probability for holes compared with that for electrons through the barrier layer, in a direction perpendicular to the plane of the barrier layer and thin layer interface.
The integrated circuit of claim 16, in which the first elementary layer comprises InP and the third elementary layer comprises Al.sub.z In.sub.1-z As, wherein z.apprxeq.0.48, epitaxially grown on a InP substrate.
Dependencies are inferred from the claim text.