Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same
AssigneeCanon Kabushiki Kaisha
InventorsKeishi Saito, Tatsuyuki Aoike, Toshimitsu Kariya, Yuzo Koda
Life of this patent
Estimating the term…
Abstract
A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 .ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.
Claims14
A non-monocrystalline silicon carbide semiconductor comprising carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 .ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.
A semiconductor device, comprising a non-monocrystalline silicon carbide semiconductor comprising carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 .ANG. at a microvoid density of not more-than 1.times.10.sup.19 cm.sup.-3.
Dependencies are inferred from the claim text.