Low bandgap polymers from fused dithiophene diester

Abstract

The present invention involves monomeric compounds having the structure: ##STR1## Substituents W and Z are independently --CN, --NO.sub.2, -aryl, -aryl-V, --COX, SO.sub.2 R, --H, or -alkyl. Substituent X is --OR, or --NR,R where R and R.sup.1 are independently -alkyl or --H. Substituent V is -halide, --NO.sub.2, --CN, --SO.sub.2 R, or --COX. At least one of W and Z is --NO.sub.2, --SO.sub.2 R, --CN, --COX or -aryl-V. In one preferred embodiment substituents W and Z are both --CN. In another preferred embodiment, substituent X is --NO.sub.2 or --CN and substituent Z is --C.sub.6 H.sub.4 NO.sub.2. These monomers are polymerized to form low bandgap polymers.

Dependencies are inferred from the claim text.