Method for lowering the phase transformation temperature of a metal silicide

A method for forming a titanium silicide layer on a silicon layer on a semiconductor wafer, comprising the steps of:

• disposing a refractory metal on the surface of said silicon layer by sputtering, said refractory metal occurring in a layer less than 2 nm thick;
• depositing a titanium layer over said refractory metal;
• and
• heating said wafer to a temperature sufficient to substantially form the C54 phase of said titanium silicide layer from said titanium layer, said temperature being less than about 700.degree. C.

A method for forming a titanium silicide layer on a silicon layer on a semiconductor wafer, comprising the steps of:

• disposing a refractory metal on the surface of said silicon layer by metal evaporation, said refractory metal occurring in a layer less than 2 nm thick;
• depositing a titanium layer over said refractory metal;
• and
• heating said wafer to a temperature sufficient to substantially form the C54 phase of said titanium silicide layer from said titanium layer, said temperature being less than about 700.degree. C.

A method for forming a titanium silicide layer on a silicon layer on a semiconductor wafer, comprising the steps of:

• disposing a refractory metal on the surface of said silicon layer by exposing the surface of said silicon layer to a solution containing said refractory metal, said refractory metal occurring in a layer less than 2 nm thick;
• depositing a titanium layer over said refractory metal;
• and
• heating said wafer to a temperature sufficient to substantially form the C54 phase of said titanium silicide layer from said titanium layer, said temperature being less than about 700.degree. C.

A method for forming a titanium silicide layer on a silicon layer on a semiconductor wafer, comprising the steps of:

• disposing a refractory metal on the surface of said silicon layer by sputtering, said refractory metal occurring in a layer less than 2 nm thick;
• depositing a layer comprising titanium and silicon over said refractory metal;
• and
• heating said wafer to a temperature sufficient to substantially form the C54 phase of said titanium silicide layer from said layer comprising titanium and silicon, said temperature being less than about 700.degree. C.

A method for forming a titanium silicide layer on a silicon layer on a semiconductor wafer, comprising the steps of:

• disposing a refractory metal on the surface of said silicon layer by metal evaporation, said refractory metal occurring in a layer less than 2 nm thick;
• depositing a layer comprising titanium and silicon over said refractory metal;
• and
• heating said wafer to a temperature sufficient to substantially form the C54 phase of said titanium silicide layer from said layer comprising titanium and silicon, said temperature being less than about 700.degree. C.

A method for forming a titanium silicide layer on a silicon layer on a semiconductor wafer, comprising the steps of:

• disposing a refractory metal on the surface of said silicon layer by exposing the surface of said silicon layer to a solution containing said refractory metal, said refractory metal occurring in a layer less than 2 nm thick;
• depositing a layer comprising titanium and silicon over said refractory metal;
• and
• heating said wafer to a temperature sufficient to substantially form the C54 phase of said titanium silicide layer from said layer comprising titanium and silicon, said temperature being less than about 700.degree. C.

A method for forming a C54 phase titanium silicide layer overlying a silicon layer on a semiconductor wafer, comprising the steps of:

• disposing a refractory metal proximate to the surface of said silicon layer by ion implantation with a dose of 10.sup.12 to 5.times.10.sup.14 atoms/cm.sup.2 ;
• depositing a titanium layer overlying said silicon layer;
• and
• heating said wafer to a temperature sufficient to form said C54 phase titanium silicide layer from said titanium layer.