Method of making reliable metal leads in high speed LSI semiconductors using thermoconductive layers
AssigneeTexas Instruments Incorporated
InventorKen Numata
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Abstract
A method for manufacturing semiconductor device having metal leads 14 with improved reliability, and device for same, including metal leads 14 on a substrate 12, a low-dielectric constant material 18 at least between the metal leads 14, and thermoconductive insulating layer 22 deposited on the metal leads 14 and the low-dielectric constant material 18. Heat from the metal leads 14 is transferable to the thermoconductive insulating layer 22, and the thermoconductive insulating layer 22 is capable of dissipating the heat. The low-dielectric constant material 18 has a dielectric constant of less than 3.5. An advantage of the invention is to improve reliability of metal leads for circuits using low-dielectric constant materials.
Claims14
A method of fabricating metal leads in a semiconductor device, said metal each being resistant to damage due to Joule's heat, said method comprising the steps of:
- forming at least two metal leads on a substrate, said metal leads having a height-to-width aspect ratio greater than 2;
- depositing a low-dielectric constant material at least between said metal leads, said low-dielectric constant material having a dielectric constant of less than 3.5;
- and
- depositing a thermoconductive insulating layer on at least the tops of said metal leads, said thermoconductive insulating layer comprising at least one of AlN and Si.sub.3 N.sub.4 ;
- wherein current passing through said metal leads produces said Joule's heat which is transferable to said thermoconductive insulating layer and is dissipatable.
A method of fabricating metal leads in a semiconductor device, said metal leads being resistant to damage due to Joule's heat, said method comprising the steps of:
- forming at least two metal leads on a substrate, said metal leads having a height-to-width aspect ratio greater than 2;
- depositing a first thermoconductive layer on at least said metal leads;
- depositing a low-dielectric constant material on said first thermoconductive layer at least between said metal leads said low-dielectric constant material having a dielectric constant of less than 3.5;
- and
- depositing a thermoconductive insulating layer on at least the tops of said metal leads, said thermoconductive insulating layer comprising AlN;
- wherein current passing through said metal leads produces said Joule's heat which is transferable to said first thermoconductive layer and said thermoconductive insulating layer and is dissipatable.
Dependencies are inferred from the claim text.