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US 5,510,285 AGranted
Method for fabricating CCD image sensors
AssigneeLG Semicon Co., Ltd.
InventorYong K. Kim
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AssigneeLG Semicon Co., Ltd.
InventorYong K. Kim
Estimating the term…
A method for fabricating a charge coupled device (CCD) image sensor including the steps of: forming a plurality of photoelectric conversion regions and a plurality of vertical charge coupled device (VCCD) regions by a selective injection of second conductivity-type ions into a first conductivity-type semiconductor substrate; forming a plurality of transfer gate electrodes over the plurality of VCCD regions for transmitting image signal charges in four phases after forming a gate insulation film on the entire surface; depositing a first insulation film on the entire surface, and forming light shielding metal thereon; forming a first metal layer by selective removal of the optical shielding metal over the plurality of photoelectric conversion regions and the plurality of VCCD regions; forming contact holes for exposing the transfer gate electrodes the same clock signals applied thereto within one VCCD region of the plurality of VCCD regions, after depositing a second insulation film on the entire surface; and forming a second metal layer by depositing optical shielding and conductive metal on the entire surface, and carrying out patterning leaving the metal only on the plurality of the VCCD regions.
A method for fabricating a charge coupled device image sensor comprising processes for:
Dependencies are inferred from the claim text.
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Charge-coupled device [CCD] image sensors: two-dimensional or three-dimensional array CCD image sensors
Solar cells and light sensors
Term ended 14 Jul 2014 (estimated)
USPTO file history isn’t available for this patent, so only indexed dates are shown.
This invention relates to a CCD image sensor and a fabrication method for a CCD (Charge Coupled Device) image sensor, more particularly to a wiring of charge transfer electrodes of a CCD image sensor which is made suitable for improving charge transfer efficiency of vertical charge coupled devices(VCCDs) thereof.
In general, in methods for scanning signals using scanning devices, such as CCD, there are interlace method and non-interlace method.
Of the methods, the non-interlace method is a method that a frame divided into a plurality of fields is scanned in the order of reception of filed data, and the interlace method is a method that a frame is divided into even fields and odd fields, which fields are scanned by corresponding even field data and odd field data, alternatively, scanned by the odd field data first, followed by even field data according to the order of reception of the field data.
FIG. 1 is a layout of a conventional charge coupled device image sensor.
FIG. 2 is a layout of transfer gate electrodes of a conventional charge coupled device image sensor.
FIG. 3 is a layout of optical shielding metal of a conventional charge coupled device image sensor.
The detail of this invention is to be explained hereinafter, referring to attached drawings.
FIG. 6 is a layout of transfer gate electrodes and optical shielding metal of a charge coupled device image sensor in accordance with this invention including photo diode regions PD arranged in a form of matrix on a semiconductor substrate generating image signal charges by converting photo signals into electric signals, vertical charge coupled device regions each formed between the photo diode regions in vertical direction for transmitting image signal charges generated in the photo diode regions PD in vertical direction, a horizontal charge coupled device region(not shown in FIG. 6) formed in lower side of the vertical charge coupled device regions horizontally for transmitting the image signal charges transmitted from the vertical charge coupled device regions in horizontal direction, and a sensing amplifier(not shown).
On the semiconductor substrate formed as the foregoing, a plurality of first, second, third and fourth transfer gate electrodes PG.sub.1 to PG.sub.4 are formed repeatedly for transmitting the image signal charges accumulated in the photo diode regions PD to the VCCD regions, and from which VCCD regions in vertical direction.