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US 5,510,275 AGranted
Method of making a semiconductor device with a composite drift region composed of a substrate and a second semiconductor material
AssigneeTexas Instruments Incorporated
InventorSatwinder Malhi
Life of this patent
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Abstract
A power semiconductor device having a source region (24) and a drain region (26) disposed in a semiconductor substrate (10). A composite drift region is formed of an n-type first drift region (12) in the substrate (10) and of a second drift region (36) composed of a second type of semiconductor material such as gallium arsenide or silican carbide which is a different material than that of the substrate.
Claims11
A method of forming a semiconductor device in a semiconductor substrate comprising the steps of:
- forming a source region in the semiconductor substrate;
- forming a drain region in the semiconductor substrate;
- forming a gate conductor adjacent to and insulated from the semiconductor substrate;
- forming a channel region in the semiconductor substrate adjacent to the source region and insulated from the gate conductor;
- and
- forming first and second drift regions to form a composite drift region between the drain region and the channel region, the first drift region comprising a portion of the semiconductor substrate disposed between the channel region and the drain region, the second drift region comprising a layer of semiconductor material different than the semiconductor material forming the substrate disposed adjacent the first drift region.
3 more elements
A method of forming a semiconductor device comprising the steps of:
- forming a source region in a layer comprising a first semiconductor material;
- forming a drain region in said layer, said source and drain regions separated by a channel region and a first drift region in said layer;
- forming a gate conductor over said channel region;
- and
- forming a second drift region over said first drift region, said second drift region comprising a second semiconductor material.
2 more elements
Dependencies are inferred from the claim text.