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AssigneeCanon Kabushiki Kaisha
InventorsJinsho Matsuyama, Toshimitsu Kariya, Yasushi Fujioka, Tetsuya Takei, Katsumi Nakagawa, Masahiro Kanai, Hiroshi Echizen
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A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously moving circumferential wall exposed to the plasma.
A method for continuously forming a functional deposited film by a microwave plasma chemical vapor deposition process, which comprises:
The method according to clam 1, wherein the surface of the substrate web is electorconductive.
Dependencies are inferred from the claim text.