CVD method of producing and doping fullerenes
AssigneeUniversity of Central Florida
InventorLee Chow
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Abstract
Methods of producing fullerenes in large-macroscopic quantities inexpensively is disclosed without using solid carbon material such as graphite. In a preferred embodiment, fullerenes are formed by a hot filament CVD procedure. The fullerenes occur in the soot that forms as a by-product on the edges of the substrate holder. Mass spectrum of soot deposits shows lines corresponding to C.sub.60. From the typical concentrations of gaseous species in the diamond-growing CVD chamber, hydrocarbon species including CH.sub.3 or C.sub.2 H.sub.2 can be the precursors for the formation of fullerenes in the CVD chamber. A method of using fullerenes to enhance the properties of rubber composites is also described.
Claims15
A method of producing fullerenes using an electrically heated metal filament to deposit soot containing fullerenes on a substrate within a Chemical Vapor Deposition chamber, comprising the steps of:
- (a) feeding and mixing, under fullerene growth conditions to increase the yield of fullerenes-containing soot, approximately 0.5 to 2% CH.sub.4 gas with approximately 98 to 99.5% H.sub.2 gas into a Chemical Vapor Deposition chamber containing a substrate and a metal filament;
- (b) raising the temperature of the metal filament in the chamber to approximately 2200 degrees C.;
- (c) maintaining the temperature of the substrate to be between approximately 900 to 950 degrees C.;
- (d) collecting soot from the substrate in the chamber;
- and
- (e) extracting fullerenes from the collected soot.
A method of producing fullerenes using an electrically heated metal filament and a substrate within a Chemical Vapor Deposition chamber, comprising the steps of:
- (a) providing a current maintained at approximately 30 to 100 A to a tungsten filament within a Chemical Vapor Deposition chamber;
- (b) feeding and mixing, under fullerene growth conditions to increase the yield of fullerenes-containing soot, approximately 0.5 to 2% CH.sub.4 gas and approximately 98 to 99.5% H.sub.2 gas to the chamber;
- (c) maintaining the temperature of a silicon substrate in the chamber to be approximately 900 to 950 degrees C.;
- (d) collecting soot from the substrate in the chamber;
- and
- (e) extracting fullerenes from the collected soot.
Dependencies are inferred from the claim text.