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US 5,508,550 AGranted
Semiconductor device including a lateral-type transistor
AssigneeCanon Kabushiki Kaisha
InventorsMasakazu Morishita, Shigetoshi Sugawa, Toru Koizumi
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Abstract
A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.
Claims13
A semiconductor device having a transistor, said device comprising:
- a semiconductor, having a source region, a drain region and a channel region,
- a gate insulative film, and
- a gate electrode,
- wherein the gate electrode is electrically connected to a part of the channel region through a contact region of the semiconductor having a conductivity type different from a conductivity type of the channel region of the semiconductor, and the channel region has a same conductivity type as that of the source and drain regions of the semiconductor and has an impurity concentration lower than that of the source and drain regions of the semiconductor.
1 more element
Dependencies are inferred from the claim text.