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US 5,508,531 AGranted
Thin film transistor (TFT) and method of manufacturing thereof
AssigneeHyundai Electronics Industries Co., Ltd.
InventorHyoung C. Ha
Life of this patent
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Abstract
There is provided a TFT having a trench surrounding gate structure that is capable of decreasing the leakage current generated during the Off-State of the TFT by securing enough channel length despite the smallness of the area, increasing the driving current by securing a sufficient cross-sectional area of an inverted channel during the On-State of the TFT, and improving the resolution of the LCD by reducing the space occupied by the TFT in the panel during the manufacturing of the LCD.
Claims3
A thin film transistor having a trench surrounding gate structure comprising:
- a first trench formed in a first oxide layer, said first trench having a bottom and sides;
- a first gate on the surface of said first trench bottom and sides, said first gate forming a second trench having a bottom and sides;
- a first gate oxide layer on the surface of said second trench bottom and sides, said first gate oxide layer forming a third trench having a bottom and sides;
- a channel on the surface of said third trench bottom and sides, said channel forming a fourth trench having a bottom and sides;
- a second gate oxide layer on the surface of said fourth trench bottom and sides, said second gate oxide layer forming a fifth trench having a bottom and sides;
- a second gate on the surface of said fifth trench bottom and sides, said second gate being electrically connected to said first gate;
- and
- a source and a drain formed at respective terminals of said channel.
5 more elements
Dependencies are inferred from the claim text.