Epitaxial thallium high temperature superconducting films formed via a nucleation layer
AssigneeSuperconductor Technologies, Inc.
InventorMichael M. Eddy
Life of this patent
Estimating the term…
Abstract
The present invention comprises a high quality, epitaxial thallium-based HTS thin film on MgO and other substrates and methods of providing the same. The present invention is achieved using a nucleation layer which provides a template for subsequent growth. Specifically, YBCO and/or YBCO analog films (films having growth characteristics and physical structures analogous to YBCO) are used as nucleation layer(s) on MgO and other substrates to enable the growth of epitaxial thallium-based HTS films.
Claims33
A method for forming an epitaxial thallium and copper oxide based superconducting film on a support comprising the steps of:
- (1) forming an epitaxial layer of a YBCO analog about 10 .ANG. to 600 .ANG. thick on the support,
- (2) depositing a thallium and copper oxide based superconductor precursor layer on the YBCO analog layer, and
- (3) crystallizing the thallium and copper oxide based superconductor precursor layer to form the epitaxial thallium and copper oxide based superconducting film.
A method for forming an epitaxial thallium based superconducting film on a substrate comprising the steps of:
- (1) forming an epitaxial layer of a YBCO analog about 10 .ANG. to 600 .ANG. thick on the substrate by an in situ process,
- (2) depositing a thallium based superconductor precursor layer on the YBCO analog layer, and
- (3) crystallizing the thallium based superconductor precursor layer to form the epitaxial thallium based superconducting film by a post-deposition thermal process.
A method for forming an epitaxial thallium and copper oxide based superconducting film on a substrate comprising the steps of:
- (1) forming an epitaxial layer of YBCO about 10 .ANG. to 600 .ANG. thick on a MgO substrate by an in situ process,
- (2) depositing a thallium and copper oxide based superconductor precursor layer on the YBCO layer, and
- (3) crystallizing the thallium and copper oxide based superconductor precursor layer to form the epitaxial thallium and copper oxide based superconducting film by a post-deposition thermal process.
A method for forming a superconducting article comprising an epitaxial thallium based superconducting film on a substrate comprising the steps of:
- (1) forming a buffer layer of BaTiO.sub.3, SrTiO.sub.3, BaZrO.sub.3, CaZrO.sub.3, or a combination of at least two of BaTiO.sub.3, SrTiO.sub.3, BaZrO.sub.3, or CaZrO.sub.3 on the substrate,
- (2) forming an epitaxial layer of a YBCO analog about 10 .ANG. to 600 .ANG. thick on the buffer layer,
- (3) depositing a thallium based superconductor precursor layer on the YBCO analog layer, and
- (4) crystallizing the thallium based superconductor precursor layer to form the epitaxial thallium based superconducting film by a post-deposition thermal process.
A method for forming a superconducting article comprising an epitaxial thallium based superconducting film on a substrate comprising the steps of:
- (1) forming a thin epitaxial layer of a YBCO analog 10 .ANG. to 600 .ANG. thick on each side of a two sided substrate,
- (2) depositing a thallium based superconductor precursor layer on each YBCO analog layer on each side of the substrate, and
- (3) crystallizing the thallium based superconductor precursor layer to form the epitaxial thallium based superconducting film by a post-deposition thermal process.
A method for forming a thallium and copper oxide based superconducting film on a substrate comprising the steps of:
- (1) forming an epitaxial YBCO analog nucleation layer 10 .ANG. to 600 .ANG. thick on the substrate,
- (2) forming the thallium and copper oxide based superconducting film on the nucleation layer.
Dependencies are inferred from the claim text.