US 5,508,225 A · Method for manufacturing semiconductor visible laser diode

Abstract

In a method for manufacturing a semiconductor laser diode, producing visible light after growing a p type GaAs contact layer on a p type AlGaInP cladding layer, an n type layer comprising that can be selectively etched with an etchant that does not etch GaAs is grown on the p type GaAs contact layer. After cooling, the n type layer is selectively etched and removed. In this method, a diffusion potential produced at the p-n junction between the p type GaAs contact layer and the n type layer prevents ionized hydrogen from entering the p type AlGaInP cladding layer during cooling, whereby the activation ratio of Zn atoms in the p type AlGaInP cladding layer is increased. Therefore, even if the Zn/III ratio during the growth of the p type AlGaInP cladding layer is low, a semiconductor laser diode with reduced threshold current and improved temperature characteristics is attained. In addition, since the n type layer grown on the p type GaAs contact layer comprises a semiconductor material that can be selectively etched with an etchant that does not etch GaAs, the etching process of the n type layer is carried out with high controllability without adversely affecting the surface of the p type GaAs contact layer, resulting in a highly reliable semiconductor laser diode.

Claims20

Dependent claims

A method for manufacturing a semiconductor laser diode producing visible light and including a p type AlGaInP cladding layer on an active layer, said method including:

successively growing an active layer, a p type AlGaInP cladding layer, and a p type GaAs cap layer on a semiconductor substrate;
regrowing a p type GaAs contact layer on said p type GaAs cap layer;
growing a first n type layer on said p type GaAs contact layer, said first n type layer comprising a semiconductor material that can be selectively etched with an etchant that does not etch GaAs and, thereafter, cooling the wafer;
and
selectively etching and removing said first n type layer.

2 more elements

A method for manufacturing a semiconductor laser diode producing visible light and including a p type AlGaInP cladding layer on an active layer, said method comprising:

successively growing an n type AlGaInP cladding layer, a GaInP active layer, a p type AlGaInP cladding layer, a p type GaAs cap layer, a first n type AlGaInP layer, and a first GaAs layer on an n type GaAs substrate and, thereafter, cooling the wafer;
selectively etching and removing said first GaAs layer and said first n type AlGaInP layer;
forming a stripe-shaped insulating film pattern on a part of the p type GaAs cap layer;
removing portions of said p type GaAs cap layer and said p type AlGaInP cladding layer by etching using said insulating film pattern as a mask to form a stripe-shaped ridge;
using said insulating film pattern as a mask, selectively growing an n type GaAs current blocking layer on said p type AlGaInP cladding layer contacting opposite side walls of said ridge;
removing said insulating film pattern;
growing a p type GaAs contact layer on said p type GaAs cap layer and on said n type GaAs current blocking layer and, successively, growing a second n type AlGaInP layer and a second GaAs layer on said p type GaAs contact layer and, thereafter, cooling the wafer;
selectively etching and removing said second GaAs layer and said second n type AlGaInP layer;
forming a p side electrode on said p type GaAs contact layer and an n side electrode on the rear surface of said n type GaAs substrate.

6 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor visible laser diode

Life of this patent

Method for manufacturing semiconductor visible laser diode

Life of this patent

Abstract

Claims20