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US 5,508,067 AGranted
Deposition of silicon nitride by plasma-enchanced chemical vapor deposition
AssigneeApplied Materials, Inc.
InventorsTatsuya Sato, Atsushi Tabata, Naoaki Kobayashi
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Abstract
A silicon nitride or silicon oxynitride film is deposited by plasma enhanced chemical vapor deposition from a precursor gas mixture of a silane, a nitrogen-containing organosilane and a nitrogen-containing gas at low temperatures of 300.degree.-400.degree. C. and pressure of 1-10 Torr. The silicon nitride films have low carbon content and low hydrogen content, low wet etch rates and they form conformal films over stepped topography.
Claims8
A process for depositing a silicon nitride film by plasma enhanced chemical vapor deposition comprising
- supplying a precursor gas mixture comprising an inorganic silane, a nitrogen-containing organosilane and a nitrogen-containing gas to a vacuum chamber,
- generating a plasma in the chamber from said precursor gases, and
- depositing a silicon nitride compound at a pressure of about 1-10 Torr and a temperature of about 300-400.degree. C. having low hydrogen content.
Dependencies are inferred from the claim text.