Sputter deposition process
AssigneeDeposition Technologies, Inc.
InventorPeter Y. Yang
Life of this patent
Estimating the term…
Abstract
Magnetron cathode reactive sputtering of oxides and nitrides of bismuth, tin, gallium, and their alloys is significantly enhanced by melting the metal and reactively sputtering the molten metal, continuously removing from the sputtering surface of the molten metal oxides or nitrides formed on the sputtering surface, and moving the oxides or nitrides to an area or place outside of or removed from the sputtering plasma zone. The metal sputtering surface is thereby maintained in a clean condition to reduce the potential for arcing and to substantially increase the rate of sputtering of the metal. Sputter deposition rates and the speed of production of compound coated substrates are thereby increased several fold.
Claims16
A process for enhancing magnetron cathode reactive sputtering of a low melting temperature metal with a reactive gas, comprising the steps of:
- installing the metal as a horizontal, upwardly facing, planar magnetron cathode target in a magnetron cathode sputtering chamber;
- applying sputtering power in the chamber to create an active sputtering zone;
- melting the metal and confining the molten metal to the surface of the cathode for sputtering of the molten metal;
- introducing the reactive gas into the sputtering chamber for reaction with the sputtered metal;
- forming an inactive, non-sputtering zone in fluid communication with but outside of the active sputtering zone;
- and
- causing reaction products forming on the surface of the molten metal in the active sputtering zone to move into the inactive non-sputtering zone thereby to maintain a clean molten metal sputtering surface on the metal in the active sputtering zone and to reduce the potential for arcing.
A process for enhancing magnetron cathode reactive sputtering of a low melting temperature metal with a reactive gas, comprising the steps of:
- installing the metal as a horizontal, upwardly facing, planar magnetron cathode target in a magnetron cathode sputtering chamber;
- applying sputtering power in the chamber and creating a plasma cloud of ions and electrons within the chamber to cause positive ions to bombard the target;
- melting the metal target and confining the molten metal to the surface of the cathode;
- sputtering the molten metal;
- introducing the reactive gas into the sputtering chamber for reaction with the sputtered metal;
- shielding marginal portions of the target from the plasma cloud and ion bombardment;
- and
- causing reaction products forming on the surface of the unshielded portions of the molten metal target to be moved to and collected within said shielded marginal portions thereby to maintain a clean molten metal sputtering surface on the unshielded portions of the target and to reduce the potential for arcing.
A process for magnetron cathode reactive sputtering of oxides and nitrides of low melting point metals chosen from bismuth, tin, gallium, and their alloys, comprising the steps of;
- installing the metal as a horizontal, upwardly facing, planar magnetron cathode target in a magnetron cathode sputtering chamber;
- evacuating the chamber;
- applying sputtering power in the chamber to create an active sputtering zone;
- melting the metal and confining the molten metal to the surface of the cathode;
- sputtering the molten metal in the active sputtering zone;
- introducing oxygen or nitrogen into the sputtering chamber for reaction with the sputtered metal;
- forming an inactive, non-sputtering zone in fluid communication with but outside of the active sputtering zone and shielding the inactive non-sputtering zone from the active sputtering zone;
- inducing circulation of the molten metal in the active sputtering zone;
- and
- causing oxides or nitrides forming on the surface of the molten bismuth, tin, gallium, or alloy thereof to be moved into the shielded inactive, non-sputtering zone thereby to maintain a clean molten metal sputtering surface in the active sputtering zone and to reduce the potential for arcing.
A process for magnetron cathode reactive sputter deposition of oxides and nitrides of low melting point metals chosen from bismuth, tin, gallium, and their alloys onto a web substrate within a magnetron cathode sputtering chamber which includes an unwind reel, a take-up reel, at least one chill drum and at least one planar magnetron cathode mounted horizontally below the chill drum, comprising the steps of:
- mounting a roll of web substrate material onto the unwind reel in the magnetron cathode sputtering chamber;
- guiding the web around the lower surface portions of the chill drum and onto the take-up reel;
- installing the low melting point metal on the cathode as a horizontal, upwardly facing, planar magnetron cathode target;
- evacuating the chamber;
- introducing one or more gases into the evacuated chamber, at least one of which gases is oxygen or nitrogen;
- moving the web through the chamber and around the chill drum;
- circulating coolant through the cathode and the chill drum to chill the same and the drum supported web substrate;
- applying sputtering power in the chamber and creating a plasma cloud of ions and electrons between the target and the drum supported portion of the web substrate to cause positive ions to bombard the target;
- melting the metal target and confining the molten metal to the upper surface of the cathode;
- sputtering the molten metal and depositing an oxide or a nitride of the metal onto the drum supported portion of the web substrate;
- forming an inactive, non-sputtering zone in communication with the molten target and shielding the non-sputtering zone from the plasma cloud and ion bombardment;
- and
- causing oxides or nitrides forming on the surface of the molten metal to move into the shielded non-sputtering zone thereby to maintain a clean sputtering surface on the molten metal and to reduce the potential for arcing;
- whereby coatings of oxides or nitrides of bismuth, tin, gallium, and their alloys may be deposited on the substrate at exceptionally high and consistent rates of deposition.
Dependencies are inferred from the claim text.