Thin-film solar cell and method of manufacturing same

A thin-film solar cell comprising, in sequence:

• (a) a transparent substrate;
• (b) a transparent electrode;
• (c) a first doped layer comprising amorphous silicon oxide of the general formula Si.sub.(1-x-y) O.sub.x N.sub.y, wherein 0.05<x<0.40 and 0.+-.y<0.07, said first doped layer containing a dopant whereby the first doped layer is of p-type conductivity, and has an optical gap of from 2.0 to 2.3 eV and a ratio of light conductivity to dark conductivity of 5 or less at 25.degree. C.;
• (d) an interfacial layer;
• (e) a layer of intrinsic amorphous silicon;
• (f) a second doped layer comprising amorphous silicon, said second doped layer containing a dopant whereby the second doped layer is of a second conductivity type different from the first conductivity type;
• and
• (g) a second electrode.

A thin-film solar cell comprising, in sequence:

• (a) a transparent substrate;
• (b) a transparent electrode;
• (c) a first doped layer comprising amorphous silicon oxide of the general formula Si.sub.(1-x-y) O.sub.x N.sub.y, wherein 0.05<x<0.40 and 0.+-.y<0.07, said first doped layer containing a dopant whereby the first doped layer is of p-type conductivity and has an optical gap of from 2.0 to 2.3 eV and a ratio of light conductivity to dark conductivity of 5 or less at 25.degree. C.;
• (d) an interfacial layer, wherein the interfacial layer comprises amorphous silicon carbide and has an optical gap less than the optical gap of the first doped layer;
• (e) a layer of intrinsic amorphous silicon;
• (f) a second doped layer comprising amorphous silicon, said second doped layer containing a dopant whereby the second doped layer is of a second conductivity type different from the first conductivity type;
• and
• (g) a second electrode.

A thin-film solar cell comprising, in sequence:

• (a) a transparent substrate;
• (b) a transparent electrode;
• (c) a first doped layer comprising amorphous silicon oxide of the general formula Si.sub.(1-x-y) O.sub.x N.sub.y, wherein 0.05<x<0.40 and 0.+-.y<0.07, said first doped layer containing a dopant whereby the first doped layer is of p-type conductivity and has an optical gap of from 2.0 to 2.3 eV and a ratio of light conductivity to dark conductivity of 5 or less at 25.degree. C.;
• (d) an interfacial layer, wherein the interfacial layer comprises amorphous silicon oxide and has an optical gap less than the optical gap of the first doped layer;
• (e) a layer of intrinsic amorphous silicon;
• (f) a second doped layer comprising amorphous silicon, said second doped layer containing a dopant whereby the second doped layer is of a second conductivity type different from the first conductivity type;
• and
• (g) a second electrode.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O and CO.sub.2, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type, wherein the first doped layer comprises a micro-crystalline phase of silicon;
• (c) forming an intrinsic amorphous silicon layer over the first doped layer;
• (d) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (e) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O and CO.sub.2, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 25.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of p-type conductivity;
• (c) forming an interfacial layer over said first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O and CO.sub.2, a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of p-type conductivity;
• (c) forming an interfacial layer over said first dope layer, wherein the interfacial layer comprises amorphous silicon carbide and has an optical gap less than the optical gap of the first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O and CO.sub.2, and a dopant in a hydrogen carrier at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of p-type conductivity;
• (c) forming an interfacial layer over said first doped layer, wherein the interfacial layer comprises amorphous silicon oxide and has an optical gap less than the optical gap of the first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, CO.sub.2, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type;
• (c) forming an interfacial layer over said first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, CO.sub.2, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type;
• (c) forming an interfacial layer over said first doped layer, wherein the interfacial layer comprises amorphous silicon carbide and has an optical gap less than the optical gap of the first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, CO.sub.2, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type;
• (c) forming an interfacial layer over said first doped layer, wherein the interfacial layer comprises amorphous silicon oxide and has an optical gap less than the optical gap of the first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, N.sub.2 O, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type;
• (c) forming an interfacial layer over said first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, N.sub.2 O, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type;
• (c) forming an interfacial layer over said first doped layer, wherein the interfacial layer comprises amorphous silicon carbide and has an optical gap less than the optical gap of the first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial doped layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, N.sub.2 O, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type;
• (c) forming an interfacial layer over said first doped layer, wherein the interfacial layer is amorphous silicon oxide and has an optical gap less than the optical gap of the first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.

A thin-film solar cell comprising, in sequence:

• (a) a transparent substrate;
• (b) a transparent electrode;
• (c) a first doped layer comprising amorphous silicon-oxide of the general formula Si.sub.(1-x-y) O.sub.x N.sub.y, wherein 0.05<x<0.40 and 0.+-.y<0.07, said first doped layer containing a dopant whereby the first doped layer is of a first conductivity type and having an optical gap of from 2.0 to 2.3 eV and a ratio of light conductivity to dark conductivity of 5 or less at 25.degree. C., and wherein the amorphous silicon oxide contains a micro-crystalline phase of silicon;
• (d) an interfacial layer;
• (e) a layer of intrinsic amorphous silicon;
• (f) a second doped layer comprising amorphous silicon, said second layer containing a dopant whereby the second doped layer is of a second conductivity type different from the first conductivity type;
• and
• (g) a second electrode.

A method of making a thin-film solar cell comprising the sequential steps of:

• (a) forming a transparent electrode on a transparent substrate;
• (b) forming a first doped layer over the transparent electrode by decomposing by means of a glow discharge plasma, a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O and CO.sub.2, and a dopant in a hydrogen carrier gas at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type;
• (c) forming an interfacial layer over said first doped layer;
• (d) forming an intrinsic amorphous silicon layer over the interfacial layer;
• (e) forming a second doped layer of amorphous silicon having a conductivity type different from the first conductivity type over the intrinsic amorphous silicon layer;
• and
• (f) forming an electrode over the second doped layer.