Video random access memory device and method implementing independent two WE nibble control

A monolithic video random access memory chip for storing electrical data, comprising:

• a) a first bank of four dynamic random access memory subarrays;
• b) a second bank of four dynamic random access memory subarrays;
• and
• c) logic control circuitry for providing a first internal write signal to control a write of the electrical data to a memory storage cell in each of said dynamic random access memories of said first bank and for providing a second internal write signal to control a write of the electrical data to a memory storage cell in each of said dynamic random access memories of said second bank, the video random access memory chip thereby having a nibble write control function.

A method for writing electrical data to a monolithic video random access memory chip having a plurality of memory banks, each memory bank having a plurality of memory subarrays, comprising the following steps:

• a) receiving an external plurality of external write enable signals;
• b) generating an internal plurality of internal write signals in response to said external plurality of external write enable signals;
• and
• c) independently writing the electrical data to one memory bank of the plurality of memory banks without regard to a memory function performed on remaining memory banks of the plurality of memory banks such that a memory cell in each of said subarrays of said one bank is written, said step of writing performed in response to at least one of said plurality of internal write signals.

A method for writing electrical data to a monolithic video random access memory chip having a plurality of memory banks, each memory bank having four memory subarrays, the method comprising the step of:

• writing said electrical data to a memory storage cell in each of the subarrays of one memory bank, wherein said step of writing comprises the steps of,
• receiving a plurality of external write enable signals;
• generating a plurality of internal write signals;
• and
• controlling said step of writing to the memory storage cell in said each subarray of said one memory bank with a corresponding one of said plurality of said internal write enable signals.

A method for storing electrical data in a monolithic memory chip comprising the step of:

• writing data to a memory storage cell in each of a plurality of subarrays of a memory bank without masking a write operation to memory storage cells in at least a second memory bank, wherein said step of writing data comprises the steps of,
• receiving a plurality of external write enable input signals;
• generating a plurality of internal write signals in response to said plurality said external write enable signals;
• and
• performing said step of writing in response to one of said plurality of internal write signals.

A method for writing first electrical input data to a memory storage cell in each one of a plurality of subarrays which form a first bank of subarrays within a monolithic memory chip having said first bank and at least a second bank of a plurality of subarrays, comprising the following steps:

• a) addressing the memory chip in order to select the memory storage cell to be written in each of the subarrays of the first bank;
• b) receiving a plurality of external write enable signals;
• c) generating an internal write signal in response to at least one of said plurality of external write enable signals;
• d) generating at least a second internal write signal in response to at least one of said plurality of external write enable signals;
• and
• e) writing the first electrical input data to the memory storage cell selected in each of the subarrays of the first bank in response to said first internal write signal, said step of writing performed independently from a memory function performed on at least said second bank.

A method for writing first electrical data to a monolithic video random access memory chip having a plurality of memory storage cells, said first electrical data written to a selected memory storage cell of the plurality of memory storage cells in each of four subarrays of a first bank of subarrays within the monolithic video random access memory chip, said monolithic video random access memory chip having a second bank having four subarrays, comprising the following steps:

• a) addressing the video random access memory chip in order to select the selected memory storage cell in each of the four subarrays of the first bank to be written;
• b) receiving a first external write enable signal;
• c) receiving a second external write enable signal;
• d) generating an internal first write signal in response to at least said first external write enable signal;
• e) generating an internal second write signal in response to at least said second external write enable signal;
• and
• f) writing the first electrical data to the memory storage cells selected in the first bank during said step of addressing in response to said internal first write signal.

A memory circuit for storing electrical data, the memory circuit fabricated as a monolithic chip, comprising:

• a) a plurality of memory banks, each memory bank comprising a plurality of memory subarrays, each memory subarray comprising a matrix of memory storage cells for storing the electrical data;
• b) a plurality of external write control pins, such that there exists at least one of said external write control pins for each said memory bank of said plurality of memory banks;
• and
• c) a signal generating assembly in electrical communication with at least one of said external write control pins, said signal generating assembly configured to generate an internal write enable signal in response to an appropriate external signal applied to said external write control pin, said internal write enable signal controlling a write function for a selected memory bank of said plurality of memory banks.

A computer system, comprising:

• a) an address input port for accepting an address from the computer system;
• b) a plurality of memory banks, each memory bank comprising a plurality of memory subarrays, each memory subarray comprising a matrix of memory storage cells for storing the electrical data;
• c) a plurality of external write control pins, such that there exists at least one of said external write control pins for each said memory bank of said plurality of memory banks, said external write control pins receiving control signals from the computer system;
• and
• d) a signal generating assembly in electrical communication with at least one of said external write control pins, said signal generating assembly configured to generate an internal write enable signal in response to an appropriate external signal applied to said external write control pin, said internal write enable signal controlling a write function for a selected memory bank of said plurality of memory banks.

A method for writing electrical data to a monolithic video random access memory chip having a plurality of memory banks, each memory bank having a plurality of memory subarrays, comprising the following steps:

• a) receiving an external plurality of external write enable signals;
• b) generating an internal plurality of internal write signals in response to said external plurality;
• and
• c) independently writing the electrical data to one memory bank of the plurality of memory banks without regard to a memory function performed on remaining memory banks of the plurality of memory banks.

A method for writing first electrical input data to a memory storage cell in each one of a plurality of subarrays which form a first bank of subarrays within a monolithic memory chip having said first bank and at least a second bank of a plurality of subarrays, comprising the following steps:

• a) addressing the memory chip in order to select the memory storage cell to be written in each of the subarrays of the first bank;
• b) receiving a plurality of external write enable signals;
• c) generating an internal write signal in response to at least one of said plurality of external write enable signals;
• and
• d) writing the first electrical input data to the memory storage cell selected in each of the subarrays of the first bank in response to said first internal write signal, said step of writing performed independently from a memory function performed on at least said second bank.

A method for writing first electrical data to a monolithic video random access memory chip having a plurality of memory storage cells, said first electrical data written to a selected memory storage cell of the plurality of memory storage cells in each of four subarrays of a first bank of subarrays within the monolithic video random access memory chip, said monolithic video random access memory chip having a second bank having four subarrays, comprising the following steps:

• a) addressing the video random access memory chip in order to select the selected memory storage cell in each of the four subarrays of the first bank to be written;
• b) receiving a first external write enable signal;
• c) generating an internal first write signal in response to at least said first external write enable signal;
• and
• d) writing the first electrical data to the memory storage cells selected in the first bank during said step of addressing in response to said internal first write signal.