Preparation of III-V semiconductor nanocrystals
AssigneeThe Regents of the University of California
InventorsA. Paul Alivisatos, Michael A. Olshavsky
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Abstract
Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.
Claims25
Particles of III-V semiconductor, said particles being crystalline, being soluble in quinoline or pyridine, and being sized such that at least about 50% are between 1 nanometer and 6 nanometers across.
A process for forming particles of a III-V semiconductor comprising
- a) reacting, in a nonwater reaction medium comprising a nitrogen-containing aromatic heterocyclic material, a reaction medium-soluble group III metal source with a reaction medium-soluble group V nonmetal source at a temperature above 100.degree.,
- b) removing the reaction medium thereby forming a reaction product comprising particles of III-V semiconductor, and
- c) recovering the particles.
A process for preparing particles of gallium arsenide comprising the steps of
- (a) reacting gallium chloride with tri(trimethylsilyl)arsine in an about 1:1 molar ratio in a quinoline reaction phase at a temperature of from 200.degree.-300.degree. C. thereby forming a GaAs-containing reaction product, and
- (b) removing the quinoline from the reaction product thereby yielding GaAs particles as a dry red powder.
Dependencies are inferred from the claim text.