Back to results
US 5,501,989 AGranted
Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToru Takayama, Yasuhiko Takemura
Life of this patent
Estimating the term…
Abstract
Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphous silicon film, or introducing such a catalyst element into the amorphous silicon film by ion implantation and subsequently crystallizing the same by applying heat annealing at an appropriate temperature.
Claims15
A method of manufacturing a semiconductor circuit comprising:
- a first step of forming a semiconductor film substantially in an amorphous state on a substrate,
- a second step of forming an insulation film, a gate electrode of a thin film transistor and a mask material for a thin film diode on said amorphous semiconductor film, wherein said thin film transistor and said thin film diode is formed from said amorphous semiconductor film,
- a third step of adding a catalyst element for promoting crystallization and a doping impurity to the amorphous semiconductor film using said gate electrode and said mask material as a mask, wherein said catalyst element is added only to areas of said amorphous semiconductor film in which said doping impurity is added and
- a fourth step of activating the introduced impurity by applying heat annealing to said semiconductor film.
1 more element
A method of manufacturing a semiconductor circuit comprising:
- a first step of forming a semiconductor film substantially in an amorphous state on a substrate,
- a second step of forming an insulation film, a gate electrode of a thin film transistor and a mask material for a thin film diode on said amorphous semiconductor film, wherein said thin film transistor and said thin film diode is formed from said amorphous semiconductor film,
- a third step of adding a doping impurity to the amorphous semiconductor film and a catalyst element for promoting crystallization regarding the amorphous semiconductor film that forms the thin film transistor using said gate electrode and said mask material as a mask respectively, wherein said catalyst element is added only to areas of said amorphous semiconductor film in which said doping impurity is added, and
- a fourth step of activating the introduced impurity by applying heat annealing to said semiconductor film.
1 more element
A method of manufacturing a semiconductor circuit comprising:
- a first step of forming a substantially amorphous semiconductor film on a substrate,
- a second step of introducing a catalyst element for promoting crystallization of amorphous semiconductor selectively to a region of said amorphous semiconductor film to form a thin film transistor at a concentration of 1.times.10.sup.17 to 2.times.10.sup.20 atoms/cm.sup.3,
- a third step of forming an insulation film, a gate electrode of the thin film transistor and a mask material for a thin film diode on said amorphous semiconductor film,
- a fourth step of adding a doping impurity to the amorphous semiconductor film using said gate electrode and said mask material as a mask and
- a fifth step of activating introduced impurity by applying heat annealing to said semiconductor film.
2 more elements
A method of manufacturing a semiconductor circuit comprising:
- a first step of forming a semiconductor film substantially in an amorphous state on a substrate,
- a second step of introducing a catalyst element for promoting crystallization to said semiconductor film at a concentration of 1.times.10.sup.17 to 2.times.10.sup.20 atoms/cm.sup.3,
- a third step of forming an insulation film, a gate electrode of a thin film transistor and a mask material for a thin film diode on said semiconductor film,
- a fourth step of adding a doping impurity to the semiconductor film using said gate electrode and said mask material as a mask and
- a fifth step of activating the introduced impurity by applying heat annealing to said semiconductor film.
2 more elements
A method of manufacturing a semiconductor circuit comprising:
- a first step of forming a semiconductor film substantially in an amorphous state on a substrate,
- a second step of forming an insulation film, a gate electrode of a thin film transistor and a mask material for a thin film diode on said semiconductor film, wherein said thin film transistor and said thin film diode is formed from said amorphous semiconductor film,
- a third step of adding a catalyst element for promoting crystallization and a doping impurity of a first conductivity type to the semiconductor film using said gate electrode and said mask material as a mask, wherein said catalyst element is added only to areas of said amorphous semiconductor film in which said doping impurity is added,
- a fourth step of forming a mask selectively on said semiconductor film and adding a second doping impurity of a conductivity type opposite to that of said first conduction type, and
- a fifth step of activating introduced impurity by applying heat annealing to said semiconductor film.
2 more elements
Dependencies are inferred from the claim text.