Dry process apparatus using plural kinds of gas
AssigneeFujitsu Limited
InventorMasahiro Watabe
Life of this patent
Estimating the term…
Abstract
An apparatus for manufacturing a semiconductor device including: a process chamber capable of being evacuated; a wafer susceptor disposed in the process chamber, the wafer susceptor having a plane on which a wafer to be processed is placed; a plurality of gas flow paths forming a structure of a plurality of spirals, facing the table, and being disposed along a flat plane generally parallel to the plane of the susceptor; and a plurality of gas ejecting holes formed in a plane of the gas flow paths facing the susceptor, for and along each gas flow path. A plurality of processes can be performed in the same chamber.
Claims20
A vapor phase processing system comprising:
- a process chamber capable of being evacuated;
- a wafer susceptor disposed in the process chamber, the wafer susceptor having a plane on which a wafer to be processed is placed;
- a plurality of gas flow paths forming a structure of a plurality of spirals, facing the wafer susceptor, and being disposed along a flat plane generally parallel to the wafer susceptor;
- and
- a plurality of gas supply holes formed in a plane of the gas flow paths facing the wafer susceptor, for and along each gas flow path.
A method for a vapor phase process comprising:
- a step of placing a wafer to be processed, in a process chamber capable of being evacuated;
- a first vapor phase process step of processing the wafer by supplying a first process gas from a first gas flow path group including one or more gas flow paths, the first gas flow path group being selected from a plurality of gas flow paths disposed along a flat plane generally parallel to the wafer and forming a structure of a plurality of spirals, each gas flow path independently supplying a process gas;
- and
- a second vapor phase process step of processing the wafer by supplying out a second process gas from a second gas flow path group including one or more gas flow paths different from the first gas flow path group selected from the plurality of gas flow paths.
Dependencies are inferred from the claim text.