US 5,499,260 A · Semiconductor laser and a method for fabricating the same

Abstract

An n-ZnMgSSe lower cladding layer, an n-ZnSSe light guiding layer, an undopad CdZnSe active layer, a p-ZnSSe light guiding layer, a p-ZnMgSSe upper cladding layer, and a p-ZnSe cap layer are successively formed on an n-GaAs substrate. Then, grooves and a ridge are formed in the respective p-type layers by etching. A current blocking layer formed by laminating SiO.sub.2 layers and TiO.sub.2 layers in multiple layers is formed so as to bury the grooves. On the top surface of the ridge where the current blocking layer is not formed, an upper electrode is formed. On the bottom surface of the n-GaAs substrate, a lower electrode is formed, and thus the ridge type semiconductor laser is fabricated. This semiconductor laser is capable of emitting blue light with an oscillating wavelength of around 500 nm. The current blocking layer of the lamination of the SiO.sub.2 and TiO.sub.2 layers allows effective confinement of both light and carriers and a drastic decrease in the threshold current for a laser oscillation.

Claims29

Dependent claims

A II-VI compound semiconductor laser, comprising:

a semiconductor substrate;
a semiconductor multilayer structure formed on the semiconductor substrate, the semiconductor multilayer structure including a lower cladding layer, an upper cladding layer and an active layer interposed between the lower and upper cladding layers;
an upper electrode formed on the semiconductor multilayer structure;
and
a lower electrode formed on a bottom surface of the semiconductor substrate,
wherein the semiconductor multilayer structure comprises a striped ridge portion, side surfaces of the striped ridge portions being covered by a current blocking layer which confines current flowing between the upper and lower electrodes into the striped ridge portion, and
the current blocking layer includes a first insulating material and a second insulating material, the first insulating material having a smaller refractive index than that of the upper cladding layer, the second insulating material having a larger refractive index than that of the upper cladding layer.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor laser and a method for fabricating the same

Life of this patent

Semiconductor laser and a method for fabricating the same

Life of this patent

Abstract

Claims29