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AssigneeHitachi, Ltd.
InventorsHiroshi Miki, Yuzuru Ohji, Shinichi Tachi
Estimating the term…
With recent decreases in the size of semiconductor memories, isolation problems typically arise during fabrication of a capacitor for a high-capacity semiconductor memory device. To overcome this, arrangements are provided to improve the isolation between capacitor elements even if those elements are extremely close together. For example, if a material such as platinum is used as a capacitor bottom electrode, a thin layer of titanium oxide can be deposited before forming the platinum, to provide a structure in which the titanium oxide is on the bottom portion of the trench. A high-dielectric-constant insulator is then formed over that structure by the Chemical Vapor Deposition. The high-dielectric-constant insulator has a composition which satisfies the stoichiometric composition over the platinum and which has more titanium atoms than those of the stoichiometric composition on the trench bottom. The resulting non-stoichiometric composition layer formed on the trench bottom has a low dielectric constant and a high insulation to maintain electric insulation between adjoining bottom capacitor electrodes. Because of a low crystallization, moreover, a layer having a planarized morphology is formed.
A semiconductor memory device having a plurality of capacitors arranged in parallel, wherein each capacitor include at least one electrode, said memory device comprising:
A semiconductor memory device as set forth in claim wherein said first insulator is formed by Sol-Gel.
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A semiconductor memory device having a plurality of capacitors arranged in parallel, wherein each capacitor includes at least one electrode, said memory device comprising:
Dependencies are inferred from the claim text.