High-frequency use non-reciprocal circuit element

A high-frequency use non-reciprocal circuit element comprising:

• at least one insulator layer;
• a plurality of central electrodes being separated through said insulator layer to be electrically insulated from each other while being arranged to intersect with each other;
• a high-frequency use magnetic body being arranged on an intersectional portion of said central electrodes;
• and
• impedance-matching capacitance being connected to said central electrodes,
• a dc magnetic field being applied to said intersectional portion by a permanent magnet,
• said insulator layer and a dielectric portion for said impedance-matching capacitance being integrally formed by the same magnetic layer as said high-frequency use magnetic body,
• said high-frequency use non-reciprocal circuit element further comprising at least a pair of electrodes for deriving said impedance-matching capacitance, being formed to overlap with each other through said high-frequency use magnetic layer;
• and
• further comprising an earth electrode being provided in a position separated from said central electrodes and said at least a pair of electrodes for deriving said impedance-matching capacitance through said magnetic layer.

A high-frequency use non-reciprocal circuit element comprising:

• at least one insulator layer;
• a plurality of central electrodes being separated through said insulator layer to be electrically insulated from each other while being arranged to intersect with each other;
• a high-frequency use magnetic body being arranged on an intersectional portion of said central electrodes;
• and
• impedance-matching capacitance being connected to said central electrodes,
• a dc magnetic field being applied to said intersectional portion by a permanent magnet,
• said insulator layer and a dielectric portion for said impedance-matching capacitance being integrally formed by the same magnetic layer as said high-frequency use magnetic body,
• said high-frequency use non-reciprocal circuit element further comprising at least a pair of electrodes for deriving said impedance-matching capacitance, being formed to overlap with each other through said high-frequency use magnetic layer;
• wherein said at least a pair of electrodes for deriving said impedance-matching capacitance are formed independently of said plurality of central electrodes.