Superluminescent edge emitting device with apparent vertical light emission and method of making

A superluminescent light emitting device, comprising:

• a semiconductor supporting structure comprised of a first mirror stack comprised of a plurality of layers of semiconductor materials having matching crystal structures having a major surface;
• a light emitting portion formed above a first portion of the major surface, wherein the light emitting portion is comprised of an active layer comprised of at least one light emitting region formed above a portion of the first mirror stack and a second mirror stack comprised of a plurality of layers of semiconductor materials having matching crystal structures formed above the active layer, and is configured in a substantially circular shape to suppress lasing and has sidewalls, and wherein a light is emitted from the sidewalls of the light emitting portion;
• a non-emitting portion formed above a second portion of the major surface and adjacent to the light emitting portion, wherein the non-emitting portion has sidewalls, and wherein the sidewalls of the light emitting portion and the sidewalls of the non-emitting portion are configured to direct the light emitted from the light emitting portion substantially perpendicular to the major surface.