US 5,497,034 A · IC wiring connecting method and apparatus · patentgrep

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Abstract

An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

Claims72

Dependent claims

A multilayer IC device comprising:

a substrate;
an insulating film which is formed over the substrate;
a plurality of conductive lines which are located over the insulating film and include at least one upper conductive line and at least one lower conductive line sandwiching an intermediate insulating film, an upper conductive line and intermediate insulating film being on a lower conductive line and having at least one hole through said upper conductive line and said intermediate insulating film so as to expose the lower conductive line, whereby edges of the upper conductive line are exposed by said at least one hole, the at least one hole being formed by irradiating with a focussed energy beam;
a protective film which covers the conductive lines, the protective film having a hole therethrough, connected to a corresponding hole through the upper conductive line and intermediate insulating film so as to expose the lower conductive line, the protective film being formed by irradiating with a focussed energy beam;
a deposition insulating layer which covers said edges of the upper conductive line;
and
metal wiring portions which are provided in the holes, the metal wiring portions being portions formed by focussed energy beam chemical vapor deposition, such that the lower conductive line is connected electrically with said metal wiring portions without shorting electrically to the upper conductive line.

4 more elements

A multilayer IC device comprising:

a substrate;
an insulating film which is formed over the substrate;
a plurality of conductive lines which are located over the insulating film, the plurality of conductive lines respectively being formed in a plurality of different levels over the substrate and being such that conductive lines of adjacent levels of said plurality of different levels sandwich an intermediate insulating layer;
a protective film which covers the plurality of conductive lines, so as to provide a finished multilayer IC device structure;
at least one pair of first and second holes through said protective film of said finished multilayer IC device structure so as to expose the plurality of conductive lines of said multilayer IC device structure, the at least one pair of first and second holes being provided at separated positions and being formed by irradiating a focussed energy beam on the protective film;
first and second additional metal wiring portions respectively provided in the first and second holes of said at least one pair of first and second holes through said protective film, said first and second additional metal wiring portions being metal portions formed by local chemical vapor deposition by irradiating a focussed energy beam so as to decompose an organometallic compound, thereby to form organometallic decomposed metal portions, containing carbon, such that desired conductive lines of said multilayer IC device structure are connected electrically to said additional metal wiring portions;
and
additional metal wiring extending between the separated positions, which additional metal wiring is provided on a surface of the protective film, the additional metal wiring being metal wiring formed by local chemical vapor deposition by irradiating a focussed energy beam so as to decompose an organometallic compound, thereby to form organometallic decomposed metal wiring, containing carbon, said additional metal wiring having a predetermined width and extending along a predetermined path irradiated by said focussed energy beam, such that said additional metal wiring portions are connected electrically to each other by said additional metal wiring.

5 more elements

An IC device comprising:

a substrate;
an insulating film which is formed over the substrate;
a plurality of conductive lines which are located over the insulating film, said plurality of conductive lines respectively being provided in a plurality of different levels over the insulating film, with conductive lines of adjacent levels of said plurality of different levels sandwiching an intermediate insulating film;
a protective film which covers the plurality of conductive lines, so as to provide a finished IC device structure;
at least one pair of first and second holes through said protective film of said finished IC device structure, exposing grooves formed in surfaces of the plurality of conductive lines of said IC device structure, so as to expose bottom surfaces of said grooves formed in the surfaces of the plurality of conductive lines, the at least one pair of first and second holes being provided at separated positions and being formed by irradiating a focussed energy beam on the protective film;
first and second additional metal wiring portions respectively provided in the first and second holes of said at least one pair of first and second holes through said protective film, to bottom surfaces of said grooves formed in the surfaces of the conductive lines, said first and second additional metal wiring portions being formed of decomposed organometallic compound, formed by chemical vapor deposition of an organometallic compound, said decomposed organometallic compound containing carbon, so as to obtain electrical contact between said first and second additional metal wiring portions and respective conductive lines, said first and second additional metal wiring portions being such that desired conductive lines of said multilayer IC device structure are connected electrically to said additional metal wiring portions;
and
additional metal wiring extending between the separated positions, which additional metal wiring is provided on a surface of the protective film, said additional metal wiring having a predetermined width and extending along a predetermined path such that said additional metal wiring portions are connected electrically to each other by said additional metal wiring, said additional metal wiring being wiring formed by chemical vapor deposition of an organometallic compound, to thereby form a decomposed organometallic compound, containing carbon.

5 more elements

A multilayer IC device comprising:

a substrate;
an insulating film which is formed over the substrate;
a plurality of conductive lines which are located over the insulating film, the plurality of conductive lines respectively being formed in a plurality of different levels over the substrate and being such that conductive lines of adjacent levels of said plurality of different levels sandwich an intermediate insulating layer;
a protective film which covers the plurality of conductive lines, so as to provide a finished multilayer IC device structure;
at least one pair of first and second holes through said protective film of said finished multilayer IC device structure so as to expose the plurality of conductive lines of said multilayer IC device structure, the at least one pair of first and second holes being provided at separated positions and being formed by irradiating a focussed energy beam on the protective film;
first and second additional metal wiring portions respectively provided in the first and second holes of said at least one pair of first and second holes through said protective film, said first and second additional metal wiring portions being metal portions formed by local chemical vapor deposition by irradiating a focussed energy beam so as to decompose an organometallic compound, thereby to form organometallic decomposed metal portions, containing carbon, such that desired conductive lines of said multilayer IC device structure are connected electrically to said additional metal wiring portions;
and
additional metal wiring extending between the separated positions, which additional metal wiring is provided on a surface of the protective film, said additional metal wiring having a predetermined width and extending along a predetermined path, such that said additional metal wiring portions are connected electrically to each other by said additional metal wiring.

5 more elements

A multilayer IC device comprising:

a substrate;
an insulating film which is formed over the substrate;
a plurality of conductive lines which are located over the insulating film, the plurality of conductive lines respectively being formed in a plurality of different levels over the substrate and being such that conductive lines of adjacent levels of said plurality of different levels sandwich an intermediate insulating layer;
a protective film which covers the plurality of conductive lines, so as to provide a finished multilayer IC device structure;
at least one pair of first and second holes through said protective film of said finished multilayer IC device structure so as to expose the plurality of conductive lines of said multilayer IC device structure, the at least one pair of first and second holes being provided at separated positions and being formed by irradiating a focussed energy beam on the protective film;
first and second additional metal wiring portions respectively provided in the first and second holes of said at least one pair of first and second holes through said protective film, said first and second additional metal wiring portions being metal portions formed by local chemical vapor deposition by irradiating a focussed energy beam so as to decompose an organometallic compound, thereby to form organometallic decomposed metal portions, containing carbon, such that desired conductive lines of said multilayer IC device structure are connected electrically to said additional metal wiring portions;
and
additional metal wiring extending between the separated positions, which additional metal wiring is provided on a surface of the protective film, the additional metal wiring being metal wiring formed by local chemical vapor deposition by irradiating a focussed energy beam so as to decompose an organometallic compound, thereby to form organometallic decomposed metal wiring, containing carbon, said additional metal wiring having a predetermined width and extending along a predetermined path irradiated by said focussed energy beam, such that said additional metal wiring portions are connected electrically to each other by said additional metal wiring.

5 more elements

A multilayer IC device comprising:

a substrate;
an insulating film which is formed over the substrate;
a plurality of conductive lines which are located over the insulating film, the plurality of conductive lines respectively being formed in a plurality of different levels over the substrate and being such that conductive lines of adjacent levels of said plurality of different levels sandwich an intermediate insulating layer;
a protective film which covers the plurality of conductive lines, so as to provide a finished multilayer IC device structure;
at least one pair of first and second holes through said protective film of said finished multilayer IC device structure so as to expose the plurality of conductive lines of said multilayer IC device structure, the at least one pair of first and second holes being provided at separated positions and being formed by irradiating a focussed energy beam on the protective film;
first and second additional metal wiring portions respectively provided in the first and second holes of said at least one pair of first and second holes through said protective film, said first and second additional metal wiring portions being metal portions including a metal and carbon, such that designed conductive lines of said multilayer IC device structure are connected electrically to said additional metal wiring portions;
and
additional metal wiring extending between the separated positions, which additional metal wiring is provided on a surface of the protective film, the additional metal wiring being metal wiring including a metal and carbon, said additional metal wiring having a predetermined width and extending along a predetermined path such that said additional metal wiring portions are connected electrically to each other by said additional metal wiring.

5 more elements

A multilayer IC device comprising:

a substrate;
an insulating film which is formed over the substrate;
a plurality of conductive lines which are located over the insulating film, the plurality of conductive lines respectively being formed in a plurality of different levels over the substrate and being such that conductive lines of adjacent levels of said plurality of different levels sandwich an intermediate insulating layer;
a protective film which covers the plurality of conductive lines, so as to provide a finished multilayer IC device structure;
at least one pair of first and second holes through said protective film of said finished multilayer IC device structure so as to expose the plurality of conductive lines of said multilayer IC device structure, the at least one pair of first and second holes being provided at separated positions and being formed by irradiating a focussed energy beam on the protective film;
first and second additional metal wiring portions respectively provided in the first and second holes of said at least one pair of first and second holes through said protective film, said first and second additional metal wiring portions being metal portions formed by local chemical vapor deposition by irradiating a focussed energy beam so as to decompose an organometallic compound, thereby to form organometallic decomposed metal portions, containing carbon, such that desired conductive lines of said multilayer IC device structure are connected electrically to said additional metal wiring portions;
additional metal wiring extending between the separated positions, which additional metal wiring is provided on a surface of the protective film, the additional metal wiring being metal wiring formed by local chemical vapor deposition by irradiating a focussed energy beam so as to decompose an organometallic compound, thereby to form organometallic decomposed metal wiring, containing carbon, said additional metal wiring having a predetermined width and extending along a predetermined path irradiated by said focussed energy beam, such that said additional metal wiring portions are connected electrically to each other by said additional metal wiring;
and
a covering insulating film which covers at least partially said additional metal wiring, said covering insulating film being a local covering insulation film, formed by focused energy beam chemical vapor deposition.

6 more elements

A multilayer IC device comprising:

a substrate;
an insulating film which is formed over the substrate;
a plurality of conductive lines which are located over the insulating film, the plurality of conductive lines respectively being formed in a plurality of different levels over the substrate and being such that conductive lines of adjacent levels of said plurality of different levels sandwich an intermediate insulating layer;
a protective film which covers the plurality of conductive lines, so as to provide a finished multilayer IC device structure;
at least one pair of first and second holes through said protective film of said finished multilayer IC device structure so as to expose the plurality of conductive lines of said multilayer IC device structure, the at least one pair of first and second holes being provided at separated positions and being formed by irradiating a focussed energy beam on the protective film;
first and second additional metal wiring portions respectively provided in the first and second holes of said at least one pair of first and second holes through said protective film, said first and second additional metal wiring portions being metal portions including a metal and carbon, such that designed conductive lines of said multilayer IC device structure are connected electrically to said additional metal wiring portions;
additional metal wiring extending between the separated positions, which additional metal wiring is provided on a surface of the protective film, the additional metal wiring being metal wiring including a metal and carbon, said additional metal wiring having a predetermined width and extending along a predetermined path such that said additional metal wiring portions are connected electrically to each other by said additional metal wiring;
and
a covering insulating film which covers at least partially said additional metal wiring, said covering insulating film being a local covering insulating film formed by focused energy beam chemical vapor deposition.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/318,267Filed 5 Oct 1994 · division
Priority: JP 61-07097931 Mar 1986
Granted: 5 Mar 1996
Term ends: Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10W 20/057
By filling conductive material into holes, grooves or trenches: by selectively depositing, e.g. by using selective CVD or plating
H01J 37/3056
For evaporating or etching: for microworking, e. g. etching of gratings or trimming of electrical components
H10P 14/412
Of conductive or resistive materials: deposition of metallic or metal-silicide materials
H10P 72/0444
Apparatus for manufacture or treatment: apparatus for wiring semiconductor or solid-state device

Family

Serial32,753Parent of this division · filed 31 Mar 1987
Serial389,862Parent of this continuation · filed 4 Aug 1989
Serial705,957Parent of this continuation · filed 28 May 1991
Serial13,539Parent of this division · filed 28 Jan 1993
Serial238,888Parent of this division · filed 6 May 1994
US 4,868,068 AParent of this division
US 5,497,034 AThis patent

From the US filing history. Foreign family members aren’t listed.

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