Back to results
US 5,497,031 AGranted
Semiconductor device having semiconductor chip with backside electrode
AssigneeKabushiki Kaisha Toshiba
InventorHiroyuki Kozono
Life of this patent
Estimating the term…
Abstract
A semiconductor chip is mounted on a chip-mounting section. A conduction path forming section having a plurality of conduction paths formed therein is placed around the chip-mounting section. A heat sinking board is bonded to the backsides of the chip-mounting section and the conduction path forming section. In the conduction path forming section, a second insulating layer is formed with notches, whereby the exposed area of conduction paths that are wire-bonded to the chip-mounting section is increased.
Claims11
A semiconductor device comprising:
- a semiconductor chip having a plurality of pad electrodes on its top and a backside electrode on its backside;
- a chip-mounting section on which said semiconductor chip is mounted, said chip-mounting section having a conductive layer on its top which is in contact with said backside electrode of said semiconductor chip;
- a conduction path forming section disposed around said chip-mounting section, said conduction path forming section including first, second and third insulating layers, said second insulating layer being located over said first insulating layer, said third insulating layer being located over said second insulating layer, said first, second and third insulating layers having their respective openings which increase in diameter in the order of said first, second and third insulating layers, said semiconductor chip being placed in said opening of said first insulating layer;
- a plurality of external terminals arranged on said third insulating layer;
- a first group of conduction paths formed on said first insulating layer and having their one ends exposed in said opening of said second insulating layer and their other ends connected to said external terminals;
- and a second group of conduction paths formed on said second insulating layer and having their one ends exposed in said opening of said third insulating layer and their other ends connected to said external terminals;
- a first group of bonding wires for electrically connecting said one ends of said first group of conduction paths with said conductive layer of said chip-mounting section;
- a second group of bonding wires for electrically connecting said one ends of said second group of conduction paths with said pad electrodes of said semiconductor chip;
- and
- a heat sinking board bonded to said backside of said chip-mounting section and part of the backside of said conduction path forming section,
- said second insulating layer having notches which are cut in the opposite direction to said semiconductor chip, and the exposed area of said first group of conduction paths being set larger than that of said second group of conduction paths.
8 more elements
A semiconductor device comprising:
- a semiconductor chip having a plurality of pad electrodes on its top and a backside electrode on its backside;
- a conduction path forming section disposed around said semiconductor chip, said conduction path forming section including first, second and third insulating layers, said second insulating layer being located over said first insulating layer, said third insulating layer being located over said second insulating layer, said first, second and third insulating layers having their respective openings which increase in diameter in the order of said first, second and third insulating layers, said semiconductor chip being placed in said opening of said first insulating layer;
- a plurality of external terminals arranged on said third insulating layer;
- a first group of conduction paths formed on said first insulating layers and having their one ends exposed in said opening of said second insulating layer and their other ends connected to said external terminals;
- a second group of conduction paths formed on said second insulating layer and having their one ends exposed in said opening of said third insulating layer and their other ends connected to said external terminals;
- and a conductor formed in said first insulating layer and having its one end connected to said first group of conduction paths and its other end exposed on the backside of said first insulating layer;
- a chip-mounting section provided on the backside of said first insulating layer and coated on top with a conduction layer on which said semiconductor chip is mounted, said backside electrode of said semiconductor chip and the other end of said conductor in said first insulating layer being connected together by said conduction layer;
- bonding wires for electrically connecting said one ends of said second group of conduction paths with said pad electrodes of said semiconductor chip;
- and
- a heat sinking board bonded to backsides of said chip-mounting section and said first insulating layer.
7 more elements
A semiconductor device comprising:
- a semiconductor chip having a plurality of pad electrodes on its top and a backside electrode on its backside;
- a conduction path forming section disposed around said semiconductor chip, said conduction path forming section including first, second and third insulating layers, said second insulating layer being located over said first insulating layer, said third insulating layer being located over said second insulating layer, said first, second and third insulating layers having their respective openings which increase in diameter in the order of said first, second and third insulating layers, said semiconductor chip being placed in said opening of said first insulating layer;
- a plurality of external terminals arranged on said third insulating layer;
- a first group of conduction paths formed on said first insulating layers and having their one ends exposed in said opening of said second insulating layer and their other ends connected to said external terminals;
- a second group of conduction paths formed on said second insulating layer and having their one ends exposed in said opening of said third insulating layer and their other ends connected to said external terminals;
- and a conductor formed in said first insulating layer and having its one end connected to said first group of conduction paths and its other end exposed on the backside of said first insulating layer;
- bonding wires for electrically connecting said one ends of said second group of conduction paths with said pad electrodes of said semiconductor chip;
- and
- a heat sinking board bonded to said backside of said first insulating layer and having a conductive layer on its top, said semiconductor chip being mounted on said conductive layer and said conductive layer being in contact with said backside of said semiconductor chip and the other end of said conductor.
6 more elements
Dependencies are inferred from the claim text.