Tin-indium antimonide infrared detector
AssigneeKabushiki Kaisha Toshiba
InventorsKatsuyoshi Fukuda, Fumio Nakata, Keitaro Shigenaka, Keijiro Hirahara
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Abstract
A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.
Claims8
A compound semiconductor device, comprising:
- a substrate composed of indium antimonide (InSb);
- a first conductive layer deposited on said substrate and composed of tin-indium antimonide having a composition represented by the chemical formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3;
- a second conductive region that is a semiconductor device region (active region) formed in said first conductive layer;
- an electrode provided on said second conductive layer;
- and
- a surface protective film deposited on said first conductive layer except for said electrode portion.
A compound semiconductor that is composed of tin-indium antimonide having a composition represented by the chemical formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3,
- wherein said compound semiconductor further contains Te as a source of conductor impurities.
Dependencies are inferred from the claim text.